Flexible Graphene Devices with an Embedded Back-Gate  

作　　者：Jasper van Veen Andres Castellanos- Gomez Herre S. J. van der Zant Gary A. Steele 

机构地区：[1]Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands

出　　处：《Graphene》2013年第1期13-17,共5页石墨烯（英文）

摘　　要：We show the fabrication of flexible graphene devices with an embedded backgate. The resistance of these devices can be tuned by changing the strain through the bending of the substrate. These devices can be useful for applications requiring a flexible graphene-based field effect transistor in where the graphene channel is not covered (such as biological or chemical sensors and photo-detectors).We show the fabrication of flexible graphene devices with an embedded backgate. The resistance of these devices can be tuned by changing the strain through the bending of the substrate. These devices can be useful for applications requiring a flexible graphene-based field effect transistor in where the graphene channel is not covered (such as biological or chemical sensors and photo-detectors).

关 键 词：GRAPHENE Device FLEXIBLE ELECTRONICS BACK-GATE STRAIN Engineering 

分 类 号：R73[医药卫生—肿瘤]