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Highly sensitive and stable β-Ga_(2)O_(3) DUV phototransistor with local back-gate structure and its neuromorphic application被引量：1: 《Nano Research》2022年第10期9359-9367,共9页Xiao-Xi Li Guang Zeng Yu-Chun Li Qiu-Jun Yu Meng-Yang Liu Li-Yuan Zhu Wenjun Liu Ying-Guo Yang David Wei Zhang Hong-Liang Lu; supported by the National Natural Science Foundation of China(Nos.62027818,61874034,51861135105,and 51972319);International Science and Technology Cooperation Program of Shanghai Science and Technology Innovation Action Plan(No.21520713300);Science and Technology Commission of Shanghai Municipality(No.19520744400).; Deep ultraviolet(DUV)phototransistors are key integral of optoelectronics bearing a wide spectrum of applications in flame sensor,military detector,oil spill detection,biological sensor,and artificial intelligence fie...; 关键词：β-Ga_(2)O_(3)phototransistors local back-gate RESPONSIVITY stability photonic synapse

Improved performance of back-gate MoS2 transistors by NH3-plasma treating high-k gate dielectrics: 《Chinese Physics B》2019年第12期338-344,共7页Jian-Ying Chen Xin-Yuan Zhao Lu Liu Jing-Ping Xu; Project supported by the National Natural Science Foundation of China(Grant No.61774064); NH3-plasma treatment is used to improve the quality of the gate dielectric and interface. Al2O3 is adopted as a buffer layer between HfO2 and MoS2 to decrease the interface-state density. Four groups of MOS capacitors...; 关键词：MoS2 transistor high-k dielectric NH3-plasma treatment oxygen vacancy mobility

Chemical Vapor Deposition Growth of Large-Area Monolayer MoS_2 and Fabrication of Relevant Back-Gated Transistor: 《Chinese Physics Letters》2019年第3期70-73,共4页Jian-Ying Chen Lu Liu Chun-Xia Li Jing-Ping Xu; Supported by the National Natural Science Foundation of China under Grant No 61774064; A closed two-temperature-zone chemical vapor deposition(CVD) furnace was used to grow monolayer molybdenum disulfide(MoS_2) by optimizing the temperature and thus the evaporation volume of the Mo precursor. The experi...; 关键词：Chemical LARGE-AREA MONOLAYER FABRICATION

A Back-Gated Ferroelectric Field-Effect Transistor with an Al-Doped Zinc Oxide Channel: 《Chinese Physics Letters》2015年第2期152-156,共5页贾泽徐建龙吴肖张明明刘俊杰; Supported by the Fundamental Research Funds for the Central Universities of China; We report a back-gated metal-oxide-ferroelectric-metal （MOFM） field-effect transistor （FET） with lead zirconate titanate （PZT） material, in which an Al doped zinc oxide （AZO） channel layer with an optimized do...; 关键词：PZT AZO Pt A Back-Gated Ferroelectric Field-Effect Transistor with an Al-Doped Zinc Oxide Channel Al

Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation被引量：2: 《Journal of Semiconductors》2015年第1期82-85,共4页李蕾蕾周昕杰于宗光封晴; Project supported by the Major Fund for the National Science and Technology Program,China(No.2009ZX02306-04);the Fund of SOI Research and Development Center(No.20106250XXX); The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps intro...; 关键词：back gate phosphorus ions implantation total-dose radiation SOI MOS back-gate effect

Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress: 《Chinese Physics Letters》2014年第12期82-84,共3页郑齐文崔江维余学峰郭旗周航任迪远; Owing to the fifll isolation and minimization of the silicon active volume, silicon-on-insulator （SOI） tech- nology has better resistance against transient ionizing effects like single event effects （SEE） or latch...

Stability analysis of a back-gate graphene transistor in air environment被引量：1: 《Journal of Semiconductors》2013年第8期61-64,共4页贾昆鹏杨杰粟雅娟聂鹏飞钟健梁擎擎朱慧珑; supported by the National Sciences and Technology Major Project 02; The stability of a graphene field effect transistor（GFET） is important to its performance optimization, and study of hysteresis behavior can propose useful suggestions for GFET fabrication and optimization.In this w...; 关键词：graphene FET stability back-gate hysteresis

Flexible Graphene Devices with an Embedded Back-Gate: 《Graphene》2013年第1期13-17,共5页Jasper van Veen Andres Castellanos- Gomez Herre S. J. van der Zant Gary A. Steele; We show the fabrication of flexible graphene devices with an embedded backgate. The resistance of these devices can be tuned by changing the strain through the bending of the substrate. These devices can be useful for...; 关键词：GRAPHENE Device FLEXIBLE ELECTRONICS BACK-GATE STRAIN Engineering

Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel low-density metal-oxide semiconductor: 《Chinese Physics B》2012年第3期405-410,共6页庄翔乔明张波李肇基; Project supported by the National Natural Science Foundation of China (Grant No. 60906038); This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage （BV） for an ultra-high-voltage （UHV） high-side thin layer silicon-on-insulator （SOI） p-channel low-...; 关键词：silicon on insulator breakdown voltage back-gate voltage p-channel low-density metaloxide-semiconductor

Influence of back-gate stress on the back-gate threshold voltage of a LOCOS-isolated SOI MOSFET: 《Journal of Semiconductors》2012年第2期36-40,共5页Mei Bo Bi Jinshun Li Duoli Liu Sinan Han Zhengsheng; supported by the National Natural Science Foundation of China(No.60927006);the Major Projects of National Science and Technology; The performance of a LOCOS-isolated SOI MOSFET heavily depends on its back-gate characteristic, which can be affected by back-gate stress.A large voltage stress was applied to the back gate of SOI devices for at least...; 关键词：BACK-GATE threshold voltage STRESS SILICON-ON-INSULATOR

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