Feasibility Study to Evaluate Lattice-Space Changing of a Step-Graded SiGe/Si (110) Using STEM Moiré  

作　　者：Junji Yamanaka Mai Shirakura Chiaya Yamamoto Kei Sato Takane Yamada Kosuke O. Hara Keisuke Arimoto Kiyokazu Nakagawa Akimitsu Ishizuka Kazuo Ishizuka 

机构地区：[1]University of Yamanashi, Takeda, Kofu, Japan [2]HREM Research Inc., Matsukazedai, Higashimastuyama, Japan

出　　处：《Journal of Materials Science and Chemical Engineering》2018年第7期8-15,共8页材料科学与化学工程（英文）

摘　　要：A moiré between crystal lattice planes and scanning electron beam-lines formed in a scanning transmission electron microscope includes the information of the lattice spacing. We apply these phenomena to a compositionally graded SiGe thin film deposited onto a Si substrate by molecular beam epitaxy method. The results of the experiments and image analysis show the potential of this technique to analyze a slight change of the lattice spacing according to a compositional change.A moiré between crystal lattice planes and scanning electron beam-lines formed in a scanning transmission electron microscope includes the information of the lattice spacing. We apply these phenomena to a compositionally graded SiGe thin film deposited onto a Si substrate by molecular beam epitaxy method. The results of the experiments and image analysis show the potential of this technique to analyze a slight change of the lattice spacing according to a compositional change.

关 键 词：STEM Moiré SIGE Scanning Transmission Electron Microscopy 

分 类 号：R73[医药卫生—肿瘤]