supported by the National Natural Science Foundation of China(Grant No.61177047);the Key Project of the National Natural Science Foundation of China(Grant No.61235010)
We present a compact passively mode-locked semiconductor disk laser at 1045 nm. The gain chip without any post processing consists of 16 compressively strained In Ga As symmetrical step quantum wells in the active reg...
supported by the National Natural Science Foundation of China(Grant No.61177047);the Beijing Municipal Natural Science Foundation(Grant No.1102005);the Basic Research Foundation of Beijing University of Technology(Grant No.X3006111201501)
Self-Q-switching is observed in a bulk Yb:KGd(WO4)2 oscillator without any additional modulating elements. The output power reaches 434.4 mW at a pump power of 13.67 W, corresponding to pulse repetition rate of 125...
supported by the National Basic Research Program of China(Grant No.2013CB922404);the National Natural Science Foundation of China(Grant No.61177047);the Beijing Municipal Education Commission Project,China(Grant No.KM201010005007)
We present a passively Q-switched Yb:KGW laser based on a transmission-type saturable absorber of topological insulator:Bi2Se3.The saturable absorber is prepared on a 0.17-mm glass substrate and can translate intra-...
This work was supported by the National Natural Science Foundation of China (No. 61177047) and the Key Program of the National Natural Science Foundation of China (No. 61235010).
A Q-switched Er-doped all-fiber laser, based on a single-walled carbon nanotube saturable absorber (SA) is constructed. The SA with a modulation depth of 8% is prepared using a special chemical-corrosion method. Fur...
supported by the National Basic Research Program of China(Grant No.2013CB922404);the National Natural Science Foundation of China(Grant No.61177047);the Key Project of the National Natural Science Foundation of China(Grant No.61235010)
We demonstrate the first use of single layer graphene for compressing self-Q-switching pulses in semiconductor disk lasers. The gain region of the semiconductor disk laser used InGaAs quantum wells with a central wave...