国家自然科学基金(11274363)

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Realization of a flux-driven memtranstor at room temperature
《Chinese Physics B》2016年第2期472-476,共5页申世鹏 尚大山 柴一晟 孙阳 
Project supported by the National Natural Science Foundation of China(Grants Nos.11227405,11534015,11274363,and 11374347);the Natural Science Foundation from the Chinese Academy of Sciences(Grant No.XDB07030200)
The memtranstor has been proposed to be the fourth fundamental circuit memelement in addition to the memristor,memcapacitor, and meminductor. Here, we demonstrate the memtranstor behavior at room temperature in a devi...
关键词：fundamental circuit element magnetoelectric effect MULTIFERROIC memtranstor MEMRISTOR 
Toward the complete relational graph of fundamental circuit elements
《Chinese Physics B》2015年第6期109-114,共6页尚大山 柴一晟 曹则贤 陆俊 孙阳 
Project supported by the National Natural Science Foundation of China(Grant Nos.11227405,11374347,11274363,and 11474335);the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB07030200)
A complete and harmonized fundamental circuit relational graph with four linear and four memory elements is con- structed based on some newly defined elements, which provides a guide to developing novel circuit functi...
关键词：MEMRISTOR fundamental circuit element magnetoelectric effect transtor memtranstor 
Resistance switching in oxides with inhomogeneous conductivity
《Chinese Physics B》2013年第6期1-18,共18页尚大山 孙继荣 沈保根 Wuttig Matthias 
supported by the National Natural Science Foundation of China (Grant Nos. 11004235,11274363,51072224,and 11134007);the National Basic Research Program of China (Grant No. 2009CB930803);the Alexander von Humboldt Foundation (for S.D.S)
Electric-field-induced resistance switching （RS） phenomena have been studied for over 60 years in metal/dielectrics/metal structures. In these experiments a wide range of dielectrics have been studied including bina...
关键词：resistance switching inhomogeneous conductivity transition metal oxide 
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