supported by the National Natural Science Foundation of China(50772107);National Key Basic Research Program of China(973)(2007CB210206);National High-Tech Research and Development Program of China(863)(2009AA05Z435)~~
supported by the National Natural Science Foundation of China (50772107);National Key Basic Research Program of China (973)(2007CB210206);National High-Tech Research and Development Program of China (863) (2009AA05Z435)~~
supported by the National Natural Science Foundation of China(50772107);National Key Basic Research Program of China(973)(2007CB210206);National High-Tech Research and Development Program of China(863)(2009AA05Z435)~~
supported by the National Natural Science Foundation of China (50772107);National Key Basic Research Program of China (973)(2007CB210206);National High-Tech Research and Development Program of China (863) (2009AA05Z435)~~
The project was supported by the National Natural Science Foundation of China (50772107);National Key Basic Research Program of China (973)(2007CB210206);National High-Tech Research and Development Program of China (863) (2009AA05Z435)~~
Project supported by the National Natural Science Foundation of China (Grant No 50772107);the National High Technology Development Program of China (Grant No 2006AA05Z118)
The surface oxidation of silicon (Si) wafers by atomic oxygen radical anions (O- anions) and the preparation of metal-oxide-semiconductor (MOS) capacitors on the O-oxidized Si substrates have been examined for t...