Supported by the National Basic Research Program of China (973 Program) (2007CB924902);the National Natural Science Foundation of China (10775053, 61076089);the "Shu Guang" Project of Shanghai Education Development Foundation (09SG24)
Hole carrier mediated magnetization in Cu-doped GaN is investigated by using the first-principles calculations. By studying the sp-d interaction and the direct exchange interaction among the dopants, we obtain an equa...