国家自然科学基金(s61234006)

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相关期刊:《Chinese Physics B》更多>>
相关主题:4H-SICSEMI-INSULATINGTERMINATION更多>>
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4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination
《Chinese Physics B》2014年第5期461-464,共4页袁昊 汤晓燕 张义门 张玉明 宋庆文 杨霏 吴昊 
Project supported by the National Natural Science Foundation of China(Grant Nos.61234006 and 61274079);the Key Specific Projects of Ministry of Education of China(Grant No.625010101);the Science Project of State Grid,China(Grant No.SGRI-WD-71-13-004)
Based on the theoretical analysis of the 4H-SiC Schottky-barrier diodes (SBDs) with field plate termination, 4H-SiC SBD with semi-insulating polycrystalline silicon (SIPOS) FP termination has been fabricated. The ...
关键词:4H-SIC Schottky-barrier diodes semi-insulating polycrystalline silicon field plates termination 
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