Project supported by the National Natural Science Foundation of China(Grant Nos.61234006 and 61274079);the Key Specific Projects of Ministry of Education of China(Grant No.625010101);the Science Project of State Grid,China(Grant No.SGRI-WD-71-13-004)
Based on the theoretical analysis of the 4H-SiC Schottky-barrier diodes (SBDs) with field plate termination, 4H-SiC SBD with semi-insulating polycrystalline silicon (SIPOS) FP termination has been fabricated. The ...