supported by the National Basic Research Program of China(2009CB933004,2012CB933004);the National Natural Science Foundation of China(51172250,51303194,61328402,61306152);Zhejiang and Ningbo Natural Science Foundations(2013A610031);Science and Technology Innovative Research Team of Ningbo Municipality(2009B21005,2011B82004)
Resistive switching memories based on ion transport and related electrochemical reactions have been extensively studied for years.To utilize the resistive switching memories for high-performance information storage ap...