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国家自然科学基金(s60025409): 作品数：1被引量：1H指数：1; 导出分析报告; 相关期刊：《Rare Metals》更多>>; 相关主题：SICRESIDUAL_STRESSESRESIDUAL_STRESSRELAXATIONANNEALING更多>>; 相关领域：金属学及工艺更多>>

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Relaxation of residual stresses in SiC wafers by annealing被引量：1: 《Rare Metals》2006年第6期704-708,共5页CHEN Xiufang XU Xiangang HU Xiaobo LI Juan WANG Yingmin JIANG Shouzhen ZHANG Kai; This work was financially supported by the National Natural Science Foundation of China (Nos. 60025409 and 50472068) and by the National "863" High Technology Plan (No. 2001AA311080).; Residual stresses in SiC wafers, which were introduced during production processes including sawing, lapping, mechanical polishing （MP）, and chemical-mechanical polishing （CMP）, were evaluated in terms of changes ...; 关键词：SIC ANNEALING residual stress mechanical polishing chemical-mechanical polishing