国家自然科学基金(s60176003)

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Effects of annealing on structural, optical and electrical properties of Al-doped ZnO thin films
《Science China(Physics,Mechanics & Astronomy)》2004年第5期588-596,共9页CHEN Yanwei1,2, YU Wenhua1 & LIU Yichun1,2 1. Centre for Advanced Optoelectronic Functional Material Research, Northeast Normal University, Changchun 130024, China 2. Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, China 
This work was supported by the National Natural Science Foundation of China(Grant Nos.60176003 and 60376009).
In this paper, the structural, electrical and optical properties of Al-doped zinc oxide (ZnO: Al) thin films onto quartz substrates prepared by electron beam evaporation technique were studied. All samples are polycry...
关键词:ZnO: Al thin film  photoluminescence  electrical properties  STRUCTURAL properties  VAN der Pauw measurement. 
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