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Broadband PZT electro-optic modulator: 《Journal of Semiconductors》2025年第3期8-11,共4页Peng Wang Hongyan Yu Yujun Xie Jie Peng Chengyang Zhong Ang Li Zehao Guan Jungan Wang Chen Yang Yu Han Feng Qiu Ming Li; supported by the National Natural Science Foundation of China (Grant Nos. 61925505 and 62405070);"Pioneer" and "Leading Goose" R&D Program of Zhejiang Province (Grant No. 2024C01112);National Key Research and Development Program of China (Grant No. 2023YFB2807100)。; As the demand for computing power in data centers continues to grow, balancing data transmitting speed and energy efficiency has emerged as a critical challenge. Highbandwidth, low-power interconnection schemes are in...; 关键词：COMPUTING INTERCONNECTION MODULATOR

Broadband full-stokes polarimeter based on ReS_(2) nanobelts: 《Journal of Semiconductors》2025年第3期109-114,共6页Tinghao Lin Wendian Yao Zeyi Liu Haizhen Wang Dehui Li Xinliang Zhang; the support from the National Key Research and Development Program of China(2022YFB2803900 and 2018YFA0704403);NSFC(62074064)。; Full-Stokes polarimeters can detect the polarization states of light,which is critical for the next-generation optical and optoelectronic systems.Traditional full-Stokes polarimeters are either based on bulky optical ...; 关键词：BROADBAND states of polarization ReS_(2) full-Stokes polarimeter

Broadband polarized photodetector based on p-BP/n-ReS2 heterojunction被引量：8: 《Journal of Semiconductors》2019年第9期41-48,共8页Wenkai Zhu Xia Wei Faguang Yan Quanshan Lv Ce Hu Kaiyou Wang; supported by the National Key R&D Program of China (Grant No. 2017YFA0303400 and No.2017YFB 0405700);supported by the NSFC Grant Nos. 61774144 and 11474272;sponsored by Chinese Academy of Sciences, grant No. QYZDY-SSW-JSC020, XDPB12, and XDB28000000; Two-dimensional(2D) atomic crystals,such as graphene,black phosphorus(BP) and transition metal dichalcogenides(TMDCs) are attractive for use in optoelectronic devices,due to their unique crystal structures and optical...; 关键词：BROADBAND POLARIZED photodetection p-BP/n-ReS2 vdWs herterojunction BROADBAND vdWs HETEROJUNCTION

Optimization of broadband omnidirectional antireflection coatings for solar cells被引量：4: 《Journal of Semiconductors》2019年第3期33-38,共6页Xia Guo Qiaoli Liu Huijun Tian Ben Li Hongyi Zhou Chong Li Anqi Hu Xiaoying He; supported by the National Key Research and Development of China (No. 2017YFF0104801);the National Natural Science Foundation of China (Nos. 61675046, 61804012);the Open Fund of IPOC (No. IPOC2017B011); Broadband and omnidirectional antireflection coating is generally an effective way to improve solar cell efficiency, because the destructive interference between the reflected and incident light can maximize the light...; 关键词：ANTIREFLECTION coating ANT COLONY algorithm INCIDENT quantum efficiency SPCTRL2

A broadband high-efficiency Doherty power amplifier using symmetrical devices: 《Journal of Semiconductors》2018年第4期72-76,共5页Zhiqun Cheng Ming Zhang Jiangzhou Li Guohua Liu; Project supported by the National Natural Science Foundation of China(No.60123456);the Zhejiang Provincial Natural Science Foundation of China(No.LZ16F010001);the Zhejiang Provincial Public Technology Research Project(No.2016C31070); This paper proposes a method for broadband and high-efficiency amplification of Doherty power amplifier （DPA） using symmetric devices. In order to achieve the perfect load modulation, the carrier amplifier output ci...; 关键词：Doherty power amplifier BROADBAND high efficiency symmetric devices

Active multi-mode-interferometer broadband superluminescent diodes被引量：3: 《Journal of Semiconductors》2016年第1期64-68,共5页王飞飞金鹏吴巨吴艳华胡发杰王占国; supported by the National Natural Science Foundation of China(No.61274072);the National High Technology Research and Development Program of China(No.2013AA014201); We report a new quantum dot superluminescent diode with a new device structure. In this device, a multi- mode-interferometer configuration and a J-bend structure were monolithically integrated. Owing to the multi-mode...; 关键词：quantum dot multi-mode-interferometer superluminescent diode

Design of broadband class-F power amplifier with high-order harmonic suppression for S-band application被引量：2: 《Journal of Semiconductors》2015年第12期119-123,共5页林俊明章国豪郑耀华李思臻张志浩陈思弟; A broadband class-F power amplifier for an S-band handset device is integrated on a 330.82 mm^3 die using an In Ga /GaAs HBT process. With LC serial harmonic traps immersed into the broadband output matching circuit, ...; 关键词：S-BAND power amplifier BROADBAND class-F harmonic suppression InGaP/GaAs HBT

Broadband terahertz radiation from a biased two-dimensional electron gas in an AlGaN/GaN heterostructure: 《Journal of Semiconductors》2015年第10期55-59,共5页郑中信孙建东周宇张志鹏秦华; Project supported by the National Basic Research Program of China(No.G2009CB929303);the National Natural Science Foundation of China(No.61271157);the China Postdoctoral Science Foundation(No.2014M551678);the Jiangsu Planned Projects for Postdoctoral Research Funds(No.1301054B); The broadband terahertz （THz） emission from drifting two-dimensional electron gas （2DEG） in an AI- GaN/GaN heterostructure at 6 K is reported. The devices are designed as THz plasmon emitters according to the Smit...; 关键词：two-dimensional electron gas hot electron blackbody radiation PLASMON Fabry-Pérot cavity

Design of broadband class-F power amplifier for multiband LTE handsets applications被引量：2: 《Journal of Semiconductors》2015年第8期136-140,共5页郑耀华章国豪郑瑞清李思臻林俊明陈思弟; supported by the National Natural Science Foundation of China(No.61404032); A broadband class-F power amplifier for multiband LTE handsets applications is developed across 2.3- 2.7 GHz. The power amplifier maintains constant fundamental impedance at the output matching circuit which is operat...; 关键词：long term evolution （LTE） power amplifier BROADBAND MULTIBAND InGaP/GaAs HBT

Millimeter wave broadband high sensitivity detectors with zero-bias Schottky diodes被引量：3: 《Journal of Semiconductors》2015年第6期105-109,共5页姚常飞周明罗运生许从海; Two broadband detectors at W-band and D-band are analyzed and designed with low barrier Schottky diodes. The input circuit of the detectors is realized by low and high impedance microstrip lines, and their output circ...; 关键词：millimeter wave zero bias Schottky diode detector voltage sensitivity

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