supported by the National Natural Science Foundation of China(Grant Nos.52072285,52127816,51872218);the National Key Research and Development Program of China(Grant No.2020YFA0715000);the Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory(Grant No.XHT2020-003).
Aqueous zinc ion batteries have been considered as the prominent candidate in the next-generation batteries for its low cost,safety and high theoretical capacity.Nonetheless,formation of zinc dendrites and side reacti...
the SZSTI of Shenzhen Municipal Government (JCYJ20170818141758464);the CRCG grant of the University of Hong Kong (201910160008)for providing funding support to the project.
Conventional Al-air battery has many disadvantages for miniwatt applications,such as the complex water management,bulky electrolyte storage and potential leakage hazard.Moreover,the self-corrosion of Al anode continue...
financially supported by the National Natural Science Foundation of China (Nos.51671202 and 51301184);the "Liaoning BaiQianWan Talents" Program
To refrain the interdiffusion of elements while holding good oxidation resistance,a(Ni,Pt)Al/Ni composite coating was prepared by sequential treatments of electroplating Ni and Pt and successive gaseous aluminization....
Supported by the Industry/University Cooperative Research Center in Data Storage Technology and Applications,King Mongkut’s Institute of Technology Ladkrabang and the National Electronics and Computer Technology Center,the National Science and Technology Development Agency;the Commission of Higher Education under the National Research University(NRU)Project.
Re-deposition is a non-volatile etching by-product in reactive ion etching systems that is well known to cause dirt on etching work.In this study,we propose a novel etching method called the polymer-rich re-deposition...
Project supported by the National Basic Research Program of China (Grant Nos.2010CB934300,2011CBA00607,and 2011CB932800);the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003);the National Natural Science Foundation of China (Grant Nos. 60906004,60906003,61006087,and 61076121);the Science and Technology Council of Shanghai,China (Grant No. 1052nm07000)
Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture. Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film qualit...