ION-IRRADIATION

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相关期刊：《Progress in Natural Science:Materials International》《IMP & HIRFL Annual Report》《Chinese Physics B》《Green and Sustainable Chemistry》更多>>
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Hardening effect of multi-energyW2+-ion irradiation on tungsten–potassium alloy
《Chinese Physics B》2020年第10期363-369,共7页Yang-Yi-Peng Song Wen-Bin Qiu Long-Qing Chen Xiao-Liang Yang Hao Deng Chang-Song Liu Kun Zhang Jun Tang 
Project supported by the National Natural Science Foundation of China(Grant Nos.11975160 and 11775149);supported by the Fundamental Research Funds for the Central Universities,China。
Tungsten is one of the most promising plasma-facing materials (PFMs) to be used in the nuclear fusion reactor as divertor material in the future. In this work, W2+-ions bombardment is used to simulate the neutron irra...
关键词：plasma facing material tungsten-potassium alloy ion-irradiation hardening nanoindentation 
Synergistic Effects of Ion-Irradiation and LBE Corrosion in Martensitic Steel
《IMP & HIRFL Annual Report》2018年第1期87-87,共1页Yao Cunfeng Wang Zhiguang Zhang Hongpeng Chang Hailong Shen Tielong Zhu Yabin Pang Lilong Cui Minghuan Wei Kongfang Sun Jianrong Sheng yanbin Ma Zhiwei Liu Chao 
Lead bismuth eutectic(LBE)has been proposed as a core coolant for Lead-cooled Fast Reactor(LFR)due to its several advantages,low melting point,chemically inert and good natural circulation[1].However,the LFR presents ...
关键词：CORROSION EUTECTIC martensitic 
Silicon and III-V Solar Cells: From Modus Vivendi to Modus Operandi
《Green and Sustainable Chemistry》2017年第3期217-233,共17页Alexander Buzynin Yury Buzynin Vladimir Shengurov Vladimir Voronkov Ansgar Menke Albert Luk’yanov Vitaly Panov Nickolay Baidus 
In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junction...
关键词：Solar Cells Green Technologies p-n JUNCTIONS Ar ION-IRRADIATION Inversion of Conductivity Silicon III-V GaAs on Si Ge Buffer YSZ ANTIREFLECTION Coatings 
Ion-irradiation and luminescent porous Si
《Progress in Natural Science:Materials International》1995年第5期106-112,共7页鲍希茂 杨海强 阎锋 
Project supported by the National Natural Science Foundation of China, and Ion Beam Laboratory of Shanghai Institute of Metallurgy, Chinese Academy of Sciences
The influence of ion-irradiation on the formation and photoluminescence (PL) of porous Si was studied. The porous Si is made by electrochemical etching after Si self-implantation. With the increase of implantation dos...
关键词：POROUS SI PHOTOLUMINESCENCE ion-implantation. 
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