III-V

作品数：25被引量：59H指数：5
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基于微转印方法实现III-V-on-SOI异质集成光电探测器
《光通信研究》2025年第2期86-92,共7页王兆璁 全志恒 郑施冠卿 朱岩 叶楠 陆梁军 周林杰 宋英雄 
【目的】硅基光电子平台具有低成本制造、高集成密度和高传输速度的优势,但受限于硅材料的光电性能,单晶硅难以直接实现光纤通信O/C波段的高响应度探测。InP基InGaAs材料在光纤通信的O/C波段具有1.0×10 cm^(-2)的吸收系数,可制成具有...
关键词：硅基光电子 异质集成 微转印 光电探测器 
Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers
《Journal of Semiconductors》2022年第1期37-43,共7页Tianyi Tang Tian Yu Guanqing Yang Jiaqian Sun Wenkang Zhan Bo Xu Chao Zhao Zhanguo Wang 
supported by the National Key Research and Development Program of China(Grant No.2018YFB2200104);the“Strategic Priority Research Program”of the Chinese Academy of Sciences(Grant No.XDB43010102);the Frontier Science Key Research Program of CAS(Grant No.QYZDB-SSW-SLH006)。
InAs/GaAs quantum dot(QD)lasers were grown on silicon substrates using a thin Ge buffer and three-step growth method in the molecular beam epitaxy(MBE)system.In addition,strained superlattices were used to prevent thr...
关键词：semiconductor laser molecular beam epitaxy quantum dots III-V on Si silicon photonics 
Approaches for High-Efficiency III-V/Si Tandem Solar Cells被引量：1
《Energy and Power Engineering》2021年第12期413-427,共15页Masafumi Yamaguchi Kan-Hua Lee Patrick Schygulla Frank Dimroth Tatsuya Takamoto Ryo Ozaki Kyotaro Nakamura Nobuaki Kojima Yoshio Ohshita 
The Si tandem solar cells are very attractive for realizing high efficiency and low cost. This paper overviews current status of III-V/Si tandem solar cells including our results. The analytical results for efficiency...
关键词：High-Efficiency Solar Cells Si Tandem MULTI-JUNCTION Efficiency Analysis 
Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies被引量：15
《Advanced Photonics》2021年第2期38-60,共23页Abdul Rahim Artur Hermans Benjamin Wohlfeil Despoina Petousi Bart Kuyken Dries Van Thourhout Roel Baets 
Optical links are moving to higher and higher transmission speeds while shrinking to shorter and shorter ranges where optical links are envisaged even at the chip scale.The scaling in data speed and span of the optica...
关键词：high-speed modulators silicon photonics plasma dispersion effect FERROELECTRICS graphene III-V on Si organic(electro-optic)materials. 
A review of silicon-based wafer bonding processes,an approach to realize the monolithic integration of Si-CMOS and III-V-on-Si wafers被引量：6
《Journal of Semiconductors》2021年第2期80-99,共20页Shuyu Bao Yue Wang Khaw Lina Li Zhang Bing Wang Wardhana Aji Sasangka Kenneth Eng Kian Lee Soo Jin Chua Jurgen Michel Eugene Fitzgerald Chuan Seng Tan Kwang Hong Lee 
The heterogeneous integration of III-V devices with Si-CMOS on a common Si platform has shown great promise in the new generations of electrical and optical systems for novel applications,such as HEMT or LED with inte...
关键词：MATERIAL thin film integrated circuit 
Graphical Abstracts/Acta Pharmaceutica Sinica B, 9 (2019) iii-viii
《药学学报》2019年第6期I0002-I0007,共6页
Nonlinear frequency conversion in optical nanoantennas and metasurfaces:materials evolution and fabrication被引量：11
《Opto-Electronic Advances》2018年第10期1-12,共12页Mohsen Rahmani Giuseppe Leo Igal Brener Anatoly V. Zayats Stefan A. Maier Costantino De Angelis Hoe Tan Valerio Flavio Gili Fouad Karouta Rupert Oulton Kaushal Vora Mykhaylo Lysevych Isabelle Staude Lei Xu Andrey E. Miroshnichenko Chennupati Jagadish Dragomir N. Neshev 
Nonlinear frequency conversion is one of the most fundamental processes in nonlinear optics.It has a wide range of applications in our daily lives,including novel light sources,sensing,and information processing.It is...
关键词：NONLINEAR NANOPHOTONICS METALLIC NANOANTENNAS dielectric NANOANTENNAS III-V SEMICONDUCTOR nanoantenna nanofabrication 
Widely tunable 2.3μm III-V-on-silicon Vernier lasers for broadband spectroscopic sensing被引量：8
《Photonics Research》2018年第9期858-866,共9页RUIJUN WANG STEPHAN SPRENGEL ANTON VASILIEV GERHARD BOEHM JORIS VAN CAMPENHOUT GuY LEPAGE PETER VERHEYEN ROEL BAETS MARKUS-CHRISTIAN AMANN GUNTHER ROELKENS 
H2020 European Research Council(ERC)(FireSpec);INTERREG(Safeside)
Heterogeneously integrating III-V materials on silicon photonic integrated circuits has emerged as a promising approach to make advanced laser sources for optical communication and sensing applications. Tunable semico...
关键词：硅光子 集成电路 通讯技术 发展现状 
Ⅲ-Ⅴ族半导体纳米粒子的几种合成方法
《化工管理》2017年第26期220-220,共1页周乐怡 张宏 
Ⅲ-Ⅴ族半导体纳米材料近年来受到广泛的重视。本文综述了近几年合成Ⅲ-Ⅴ族半导体纳米材料的进展情况。
关键词：III-V半导体 纳米粒子 
Silicon and III-V Solar Cells: From Modus Vivendi to Modus Operandi
《Green and Sustainable Chemistry》2017年第3期217-233,共17页Alexander Buzynin Yury Buzynin Vladimir Shengurov Vladimir Voronkov Ansgar Menke Albert Luk’yanov Vitaly Panov Nickolay Baidus 
In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junction...
关键词：Solar Cells Green Technologies p-n JUNCTIONS Ar ION-IRRADIATION Inversion of Conductivity Silicon III-V GaAs on Si Ge Buffer YSZ ANTIREFLECTION Coatings 
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