Project supported by the National Natural Science Foundation of China (Grants No. 61604027 and 61704016);the Chongqing Natural Science Foundation, China (Grant No. cstc2020jcyj-msxmX0550)。
A power MOSFET with integrated split gate and dummy gate(SD-MOS) is proposed and demonstrated by the TCAD SENTAURUS.The split gate is surrounded by the source and shielded by the dummy gate.Consequently,the coupling a...
Supported in part by the General Program of National Natural Science Foundation of China under Grant 51577010,51777012;in part by the Fundamental Research Funds for the Central Universities under Grant 2017JBM054.
MOSFETs are widely used in power electronics converters.Due to the high di/dt and dv/dt of the MOSFET and parasitic parameters in the circuit,drain voltage spikes and oscillations will be generated during turn-off,whi...