TURN-OFF

作品数:30被引量:47H指数:4
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相关领域:电子电信理学更多>>
相关作者:范尧付海燕杨天鸣刘瑞姣曾竟更多>>
相关机构:中南民族大学新疆师范大学国网智能电网研究院中电普瑞科技有限公司更多>>
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An integrated split and dummy gates MOSFET with fast turn-off and reverse recovery characteristics
《Chinese Physics B》2023年第6期545-550,共6页陈伟中 牟柳亭 秦海峰 张红升 韩郑生 
Project supported by the National Natural Science Foundation of China (Grants No. 61604027 and 61704016);the Chongqing Natural Science Foundation, China (Grant No. cstc2020jcyj-msxmX0550)。
A power MOSFET with integrated split gate and dummy gate(SD-MOS) is proposed and demonstrated by the TCAD SENTAURUS.The split gate is surrounded by the source and shielded by the dummy gate.Consequently,the coupling a...
关键词:MOSFET split gate dummy gate TURN-OFF and reverse recovery 
A New Active Gate Driver for MOSFET to Suppress Turn-Off Spike and Oscillation被引量:1
《Chinese Journal of Electrical Engineering》2018年第2期43-49,共7页Yanfeng Jiang Chao Feng Zhichang Yang Xingran Zhao Hong Li 
Supported in part by the General Program of National Natural Science Foundation of China under Grant 51577010,51777012;in part by the Fundamental Research Funds for the Central Universities under Grant 2017JBM054.
MOSFETs are widely used in power electronics converters.Due to the high di/dt and dv/dt of the MOSFET and parasitic parameters in the circuit,drain voltage spikes and oscillations will be generated during turn-off,whi...
关键词:Active gate driver electromagnetic interference voltage spike OSCILLATION 
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