Project supported by the National Natural Science Foundation of China (Grants No. 61604027 and 61704016);the Chongqing Natural Science Foundation, China (Grant No. cstc2020jcyj-msxmX0550)。
A power MOSFET with integrated split gate and dummy gate(SD-MOS) is proposed and demonstrated by the TCAD SENTAURUS.The split gate is surrounded by the source and shielded by the dummy gate.Consequently,the coupling a...
supprted by the National Natural Science Foundation of China(21171110);the Natural Science Foundation of Science and Technology Agency of Shanxi Province(20210302123324);the Shanxi Normal University Quality Curriculum(2019YZKC-13);the 1331 Project of Shanxi Province.
1.Introduction Due to the potential harm of even low doses of Pd^(2+),to develop efficient approaches towards selective recognition of trace Pd^(2+)in environment is of great significance[1].Up to now,a wide variety o...
This work was supported by the National Natural Science Foundation of China-State Grid Corporation Joint Fund for Smart Grid(No.U1766219).
High-voltage and high-power IGBT chips have a noticeable carrier storage effect,which is related to the load current.However,the research on the carrier storage effect of existing IGBT behavior models is insufficient....
The commutation overshoot is an important reference index for the insulation coordination of the converter station as well as the thyristor voltage capacity.Although the dispersity of reverse recovery charges of serie...
Transient electromagnetic method(TEM)has been widely used in the field of medium and shallow underground detection due to its high detection efficiency and large detection depth.However,due to the long turn-off time o...
Supported by the National Natural Science Foundation of China(51907032);the Natural Science Foundation of Guangdong Province(2018A030313365).
Owing to the advantages of high efficiency,high energy density,electrical isolation,low electromagnetic interference(EMI)and harmonic pollution,magnetic integration,wide output ranges,low voltage stress,and high opera...
Project supported by the National Natural Science Foundation of China(Grant No.51677149)
An ultra-high voltage 4H-silicon carbide(Si C) gate turn-off(GTO) thyristor for low switching time is proposed and analyzed by numerical simulation. It features a double epitaxial p-base in which an extra electrical f...