METAL-OXIDE-SEMICONDUCTOR

作品数:60被引量:53H指数:3
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相关领域:电子电信更多>>
相关作者:杨霏陶永洪汪玲刘奥陈弘达更多>>
相关机构:国网智能电网研究院南京电子器件研究所中国科学院全球能源互联网研究院更多>>
相关期刊:《Journal of Rare Earths》《系统仿真技术》《Chinese Physics B》《Chinese Physics Letters》更多>>
相关基金:国家自然科学基金国家重点基础研究发展计划国家电网公司科技项目中国博士后科学基金更多>>
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Visible-blind short-wavelength infrared photodetector with high responsivity based on hyperdoped silicon被引量:2
《Photonics Research》2019年第3期351-358,共8页XIAODONG QIU ZIJING WANG XIAOTONG HOU XUEGONG YU DEREN YANG 
National Natural Science Foundation of China(NSFC)(51532007,61574124,61721005)
Developing a low-cost, room-temperature operated and complementary metal-oxide-semiconductor(CMOS)compatible visible-blind short-wavelength infrared(SWIR) silicon photodetector is of interest for security,telecommunic...
关键词:Visible-blind short-wavelength infrared photodetector hyperdoped silicon complementary metal-oxide-semiconductor(CMOS) 
All-silicon carrier accumulation modulator based on a lateral metal-oxide-semiconductor capacitor被引量:7
《Photonics Research》2018年第5期373-379,共7页KAPIL DEBNATH DAVID J.THOMSON WEIWEI ZHANG ALI Z.KHOKHAR CALLUM LITTLEJOHNS JAMES BYERS LORENZO MASTRONARDI MUHAMMAD K.HUSAIN KOUTA IBUKURO FREOERIC Y.GARDES GRAHAM T,REED SHINICHI SAITO 
Engineering and Physical Sciences Research Council(EPSRC)(EP/M008975/1,EP/M009416/1,EP/N013247/1,EP/R003076/1);EU Seventh Framework Programme(FP7)Marie-Curie Carrier-Integration-Grant(PCIG13-GA-2013-618116)
In silicon photonics, the carrier depletion scheme has been the most commonly used mechanism for demonstrat- ing high-speed electro-optic modulation. However, in terms of phase modulation efficiency, carrier- accumnla...
关键词:All-silicon carrier accumulation modulator a lateral metal-oxide-semiconductor capacitor 
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