Spiral polarization rotators, rotating polarization ellipse axes clockwise or counterclockwise, depending on the azimuth angle in the transverse plane, are considered. It is shown that spiral polarization rotators lea...
This work was funded by Hundred Talents Program of Fujian Province and the National Natural Science Foundation of China (No. 61774158), and the Natural Science Foundation of Fujian Province (No. 2018J01110).
Simultaneous epitaxial growth of film and nanowire array on a substrate is of both scientific significance and practical importance for nanoscale optoelectronics. Nevertheless, in situ building conducting connection b...
supported by the Natural Sciences and Engineering Research Council of Canada (NSERC)-Canada Graduate Scholarships-Doctoral Program, the NSERC (Jesko Sirker and Can-Ming Hu);the National Natural Science Foundation of China (Grant No. 11429401);the Canada Foundation for Innovation and Canadian Microelectronics Corporation Grants (Can Ming Hu)
We experimentally and theoretically investigate the microwave transmission line shape of the cavity-magnon-polariton(CMP)created by inserting a low damping magnetic insulator into a high quality 3D microwave cavity. W...
Project supported by the National Natural Science Foundation of China(Grant No.51172079);the Science and Technology Program of Guangdong Province,China(Grant Nos.2010B090400456 and 2010A081002002);the Science and Technology Program of Guangzhou,China(Grant No.2011J4300018);the Program for Changjiang Scholars and Innovative Research Team in Universities of China(Grant No.IRT13064)
A theoretical study of polar and semi/non-polar InGaN/GaN light-emitting diodes(LEDs) with different internal surface polarization charges, which can be grown on Si substrates, is conducted by using APSYS software. ...
supported by the National Natural Science Foundation of China(Grant Nos.91233111,61274041,and 11275228);the Special Funds for Major State Basic Research Project of China(Grant No.2012CB619305);the National High Technology R&D Program of China(Grant Nos.2014AA032603 and2014AA032609);the Guangdong Provincial Special Fund for LED Industrial Development,China(Grant No.2012A080302003)
In this paper,we use the a-plane InGaN interlayer to improve the property of a-plane GaN.Based on the a-InGaN interlayer,a template exhibits that a regular,porous structure,which acts as a compliant effect,can be obta...