相关期刊:《Protection and Control of Modern Power Systems》《Communications in Theoretical Physics》《Chinese Journal of Polymer Science》《Chinese Physics B》更多>>
Supported by the National Natural Science Foundation of China under Grant No 60576052, and Material Research Foundation of China under Grant No 9140C0903010604.
A new lateral double diffused metal oxide semiconductor field effect transistor with a double-charge accumulation layer using a folded silicon substrate is proposed to improve the performance of the breakdown voltage ...