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DOUBLER: 作品数：15被引量：2H指数：1; 导出分析报告; 相关作者：陈乾宏阮新波王建冈更多>>; 相关机构：台山顺宝钢化玻璃装饰有限公司上海交通大学南京航空航天大学更多>>; 相关期刊：《Chinese Physics B》《Science Bulletin》《电脑爱好者》《Chinese Journal of Electronics》更多>>; 相关基金：国家自然科学基金更多>>

High Power GaN Doubler with High Duty Cycle Pulse Based on Local Non-reflection Design: 《Chinese Journal of Electronics》2024年第5期1196-1203,共8页Yazhou DONG Tianchi ZHOU Shixiong LIANG Guodong GU Hongji ZHOU Jianghua YU Hailong GUO Yaxin ZHANG; supported by the National Key Research and Development Program of China(Grant Nos.2021YFA1401000 and 2018YFB1801503);the National Natural Science Foundation of China(Grant Nos.61931006,62131007,U20A20212,61901093,61871419,62101111,and 61921002);the Sichuan Science and Technology Program(Grant No.2020JDRc0028);the Fundamental Research Funds for the Central Universities(Grant No.ZYGX2020ZB011);the China Postdoctoral Science Foundation(Grant No.2021M700706).; The study focuses on the development of gallium nitride(GaN)Schottky barrier diode(SBD)frequency doublers for terahertz technology.The low conversion efficiency of these doublers limits their practical applications.To...; 关键词：Gallium nitride Frequency doubler Multi-objective optimization Local non-reflection design

An Ultra-wideband Doubler Chain with 43-65 dBc Fundamental Rejection in Ku/K/Ka Band: 《Chinese Journal of Electronics》2024年第5期1204-1217,共14页Long WANG Jixin CHEN Debin HOU Xiaojie XU Zekun LI Dawei TANG Rui ZHOU Hao QI Yu XIANG; In this paper,a double-balanced doubler chain with>43-dBc fundamental rejection over an ultra-wide bandwidth in 0.13-μm SiGe BiCMOS technology is proposed.To achieve high fundamental rejection,high output power,and h...; 关键词：Bandwidth DOUBLER Double-balanced Fundamental rejection Single-balanced

High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure: 《Chinese Physics B》2023年第1期464-469,共6页刘晓宇张勇王皓冉魏浩淼周静涛金智徐跃杭延波; Project supported by the National Natural Science Foundation of China (Grant No.61871072)。; A high-performance terahertz Schottky barrier diode(SBD)with an inverted trapezoidal epitaxial cross-sectional structure featuring high varactor characteristics and reverse breakdown characteristics is reported in thi...; 关键词：inverted trapezoidal epitaxial cross-section structure DOUBLER Schottky barrier diode(SBD) GAAS terahertz capacitance modulation ratio

Volatile organic compounds sensing based on Bennet doubler-inspired triboelectric nanogenerator and machine learning-assisted ion mobility analysis: 《Science Bulletin》2021年第12期1176-1185,M0003,共11页Jianxiong Zhu Zhongda Sun Jikai Xu Rafal D.Walczak Jan ADziuban Chengkuo Lee; supported by the research grant of‘‘Chip-Scale MEMS Micro-Spectrometer for Monitoring Harsh Industrial Gases”(R-263-000-C91-305)at the National University of Singapore(NUS),Singapore;the research grant of RIE Advanced Manufacturing and Engineering(AME)programmatic grant A18A4b0055‘‘Nanosystems at the Edge”at NUS,Singapore。; Ion mobility analysis is a well-known analytical technique for identifying gas-phase compounds in fastresponse gas-monitoring systems.However,the conventional plasma discharge system is bulky,operates at a high temper...; 关键词：Machine learning Volatile organic compounds Ion mobility Triboelectric nanogenerator Plasma discharge

Preliminary study of the damage resistance of type I doubler KDP crystals at 532 nm: 《Chinese Optics Letters》2016年第5期66-68,共3页郑垠波丁磊周信达巴荣声袁静徐宏磊杨晓瑜陈波那进李亚军郑万国; This Letter is concerned with the influence of polarization on the damage performance of type I doubler potas- sium dihydrogen phosphate crystals grown by the conventional growth method under 532 nm pulse irradiation....; 关键词：Light scattering Size distribution

Nanoindentation on the doubler plane of KDP single crystal被引量：1: 《Journal of Semiconductors》2013年第3期21-25,共5页郭晓光张小冀唐宪钊郭东明高航滕晓辑; supported by the National Natural Science Foundation of China(No.51135002);the Natural Science Foundation of Liaoning Province of China(No.20102027);the Open Foundation of State Key Laboratory of Tribology of Tsinghua University(No. SKLTKF09B03); The nanohardness is from 1.44 to 2.61 GPa,the Vickers hardness is from 127 to 252 Vickers,and elastic modulus is from 52 to 123 GPa by the nanoindentation experiments on the doubler plane of KDP crystal. An indentatio...; 关键词：KDP crystal the doubler plane NANOINDENTATION size effect ANISOTROPY

A CMOS frequency generation module for 60-GHz applications: 《Journal of Semiconductors》2012年第8期102-106,共5页周春元张雷王洪瑞钱鹤; Project supported by the State Key Development Program for Basic Research of China(No.2010CB327404);the National Natural Science and Technology Program of China(No.2011AA010202);the National Natural Science Foundation of China(No.61101001);the Tsinghua National Laboratory for Information Science and Technology(TNList) Cross-Discipline Foundation; A frequency generation module for 60-GHz transceivers and phased array systems is presented in this paper. It is composed of a divide-by-2 current mode logic divider （CML） and a doubler in push-push configuration. B...; 关键词：frequency generation DIVIDER DOUBLER CMOS

A GaAs planar Schottky varactor diode for left-handed nonlinear transmission line applications: 《Chinese Physics B》2012年第6期462-467,共6页董军荣杨浩田超黄杰张海英; Project supported by the National Scientific Major Projects of China (Grant No. 2011ZX03004-001-02);the National Natural Science Foundation of China (Grant No. 60806024); The left-handed nonlinear transmission line （LH-NLTL） based on monolithic microwave integrated circuit （MMIC） technology possesses significant advantages such as wide frequency band, high operating frequency, high...; 关键词：GAAS planar Schottky varactor diode left-handed nonlinear transmission lines fre-quency doubler

Design of 20-44 GHz broadband doubler MMIC: 《Journal of Semiconductors》2010年第4期113-116,共4页李芹王志功李伟; This paper presents the design and performance of a broadband millimeter-wave frequency doubler MMIC using active 0.15 μm GaAs PHEMT and operating at output frequencies from 20 to 44 GHz. This chip is composed of a s...; 关键词：frequency doubler active Balun distributed amplifier

Analysis and Design of a Kind of Improved Parallel Resonant Converters: 《Journal of Electromagnetic Analysis and Applications》2009年第1期66-72,共7页Chenhu Yuan Jianru Wan Xiuyan Li Hong Shen Yingpei Liu Guangye Li; Traditional transformer in high-voltage power supplies has many disadvantages such as high turn’s ratio, large volume and great design difficulties. Parallel resonant converters (PRCs) are widely used in high-voltage...; 关键词：POWER Converters PARALLEL Resonant Voltage-Doubler RECTIFIER HIGH-VOLTAGE POWER Supply

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