This work was financially supported by the "973" National Basic Research Program of China (No. 2003CB314901);the National "863" High Technology Project of China (No. 2003AA311070);the Open Project of State Key Laboratory on Integrated Opto-electronics.
A systematic investigation of the strain distribution of self-organized, lens-shaped quantum dot in the case of groffth direction on (001) substrate was presented. The three-dimensional finite element analysis for a...
This work was supported by the National Basic Research Program of China(No.2003CB314901);the Program for New Century Excellent Talents in University(No.NCET-05-0111);the National Natural Science Foundation of China(No.60576018).
Using two-step method InP epilayers were grown on GaAs(100) substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). X-ray diffraction (XRD) and room-temperature (RT) photolu- minescence ...