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SUPERLATTICES: 作品数：218被引量：120H指数：5; 导出分析报告; 相关领域：电子电信理学更多>>; 相关作者：金英进姜恩永任世伟金光日孙聆东更多>>; 相关机构：天津大学金日成综合大学北京大学中国科学院数学与系统科学研究院更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金国家教育部博士点基金更多>>

Emergence of metal-semiconductor phase transition in MX_(2)(M=Ni,Pd,Pt;X=S,Se,Te)moirésuperlattices: 《Chinese Physics B》2025年第3期12-18,共7页Jie Li Rui-Zi Zhang Jinbo Pan Ping Chen Shixuan Du; Project supported by the National Natural Science Foundation of China(Grant Nos.52472153,11704081,62488201);the National Key Research and Development Program of China(Grant No.2022YFA1204100);National Science and Technology Innovation Talent Cultivation Program(Grant No.2023BZRC016);Guangxi Natural Science Foundation(Grant No.2020GXNSFAA297182);the special fund for“Guangxi Bagui Scholars”。; Two-dimensional(2D)moirésuperlattices with a small twist in orientation exhibit a broad range of physical properties due to the complicated intralayer and interlayer interactions modulated by the twist angle.Here,we ...; 关键词：moirésuperlattices first-principles calculations metal-semiconductor phase transition

Orbital XY models in moiré superlattices: 《Chinese Physics B》2025年第2期19-29,共11页Yanqi Li Yi-Jie Wang Zhi-Da Song; Project supported by the National Natural Science Foundation of China (Grant No. 12274005);the National Key Research and Development Program of China (Grant No. 2021YFA1401903);Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302403)。; Moiré superlattices provide a new platform to engineer various many-body problems. In this work, we consider arrays of quantum dots(QD) realized on semiconductor moiré superlattices with a deep moiré potential. We ...; 关键词：moirésuperlattices quantum dots XY model

Molecular beam epitaxial growth and physical properties of AlN/GaN superlattices with an average 50% Al composition: 《Chinese Physics B》2024年第12期376-381,共6页Siqi Li Pengfei Shao Xiao Liang Songlin Chen Zhenhua Li Xujun Su Tao Tao Zili Xie Bin Liu M.Ajmal Khan Li Wang T.T.Lin Hideki Hirayama Rong Zhang Ke Wang; Project supported by the National Key R&D Program of China(Grant No.2022YFB3605600);the National Natural Science Foundation of China(Grant No.61974065);the Key R&D Project of Jiangsu Province,China(Grant Nos.BE2020004-3 and BE2021026);Postdoctoral Fellowship Program of CPSF(Grant No.GZC20231098);the Jiangsu Special Professorship;Collaborative Innovation Center of Solid State Lighting and Energy-saving Electronics。; We report molecular beam epitaxial growth and electrical and ultraviolet light emitting properties of(AlN)m/(GaN)n superlattices(SLs),where m and n represent the numbers of monolayers.Clear satellite peaks observed in...; 关键词：ALGAN superlattices(SLs) molecular beam epitaxy(MBE)

Peak structure in the interlayer conductance of Moirésuperlattices: 《Chinese Physics B》2024年第10期376-380,共5页Yizhou Tao Chao Liu Mingwen Xiao Henan Fang; supported by the National Natural Science Foundation of China(Grant No.11704197);the Natural Science Foundation of Nanjing University of Posts and Telecommunications(Grant Nos.NY221066 and NY223074).; We investigate the peak structure in the interlayer conductance of Moirésuperlattices using a tunneling theory wedeveloped previously.The theoretical results predict that,due to the resonance of two different partial...; 关键词：Moirésuperlattice interlayer conductance electronic transport twistronics

Comprehensive study of the ultrafast photoexcited carrier dynamics in Sb_(2)Te_(3)–GeTe superlattices: 《Chinese Physics B》2024年第7期381-387,共7页叶之江金钻明蒋叶昕卢琦贾梦辉钱冬黄夏敏李舟彭滟朱亦鸣; Project supported by the National Key Research and Development Program of China(Grant Nos.2023YFF0719200 and 2022YFA1404004);the National Natural Science Foundation of China(Grant Nos.62322115,61988102,61975110,62335012,and 12074248);111 Project(Grant No.D18014);the Key Project supported by Science and Technology Commission Shanghai Municipality(Grant No.YDZX20193100004960);Science and Technology Commission of Shanghai Municipality(Grant Nos.22JC1400200 and 21S31907400);General Administration of Customs People’s Republic of China(Grant No.2019HK006)。; Chalcogenide superlattices Sb_(2)Te_(3)-GeTe is a candidate for interfacial phase-change memory(iPCM) data storage devices.By employing terahertz emission spectroscopy and the transient reflectance spectroscopy togeth...; 关键词：Sb_(2)Te_(3)/GeTe superlattices ultrafast carrier dynamics interfacial phase change memory THz emission spectroscopy transient reflectance spectroscopy

Moiré superlattices arising from growth induced by screw dislocations in layered materials: 《Chinese Physics B》2024年第7期72-77,共6页田伏钰 Muhammad Faizan 贺欣孙远慧张立军; Project supported by the National Key Research and Development Program of China(Grant No.2022YFA1402500);the National Natural Science Foundation of China(Grant No.62125402)。; Moiré superlattices(MSLs) are modulated structures produced from homogeneous or heterogeneous two-dimensional layers stacked with a twist angle and/or lattice mismatch. Enriching the methods for fabricating MSL and r...; 关键词：Moirésuperlattices interlayer interaction spiral dislocation layered materials

Impeded thermal transport in aperiodic BN/C nanotube superlattices due to phonon Anderson localization: 《Chinese Physics B》2023年第5期14-19,共6页孙路易翟方园曹增强黄晓宇郭春生王红艳倪宇翔; Anderson localization of phonons is a kind of phonon wave effect,which has been proved to occur in many structures with disorders.In this work,we introduced aperiodicity to boron nitride/carbon nanotube superlattices(...; 关键词：Anderson localization PHONONS nanotube superlattices thermal conductivity

Strain compensated type Ⅱ superlattices grown by molecular beam epitaxy: 《Chinese Physics B》2023年第4期561-567,共7页宁超于天孙瑞轩刘舒曼叶小玲卓宁王利军刘俊岐张锦川翟慎强刘峰奇; Project supported by the National Key Research and Development Project of China (Grant No. 2018YFB2200500);the National Natural Science Foundation of China (Grant Nos. 61790583, 61835011, 62174158 and 61991431);Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2021107);the Key Program of the Chinese Academy of Sciences (Grant No. XDB43000000)。; We investigate a strain compensation method for the growth of complex interband cascade laser structures. For thick In As/Al Sb superlattice clad layers, the sublayer thicknesses were adjusted so that the tensile stra...; 关键词：type-Ⅱsuperlattices strain compensation molecular beam epitaxy

High-performance extended short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices: 《Chinese Physics B》2023年第3期589-593,共5页蒋俊锴常发冉周文广李农陈伟强蒋洞微郝宏玥王国伟吴东海徐应强牛智川; the National Key Technologies R&D Program of China(Grant Nos.2019YFA0705203 and 2018YFA0209104);Major Program of the National Natural Science Foundation of China(Grant No.61790581);Aeronautical Science Foundation of China(Grant No.20182436004).; High performance short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices on GaSb substrate have been demonstrated.At 300 K,the device exhibits a 50%cut-off wavelength of~2.1μm as predicted ...; 关键词：PHOTODETECTORS INFRARED SUPERLATTICES

Interface effect on superlattice quality and optical properties of InAs/GaSb type-Ⅱ superlattices grown by molecular beam epitaxy被引量：2: 《Chinese Physics B》2022年第12期671-676,共6页Zhaojun Liu Lian-Qing Zhu Xian-Tong Zheng Yuan Liu Li-Dan Lu Dong-Liang Zhang; Project supported by the Beijing Scholars Program(Grant No.74A2111113);the Research Project of Beijing Education Committee(Grant No.KM202111232019);the National Natural Science Foundation of China(Grant No.62105039);the Research Project of Beijing Information Science&Technology University(Grant No.2022XJJ07); We systematically investigate the influence of InSb interface(IF)engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-Ⅱsuperlattices(T2SLs).The type-Ⅱsuperlattice structure is ...; 关键词：InAs/GaSb type-Ⅱsuperlattice molecular beam epitaxy interface mid-wave infrared

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