SUPERLATTICES

作品数:221被引量:120H指数:5
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相关领域:电子电信理学更多>>
相关作者:金英进姜恩永任世伟金光日孙聆东更多>>
相关机构:天津大学金日成综合大学北京大学中国科学院数学与系统科学研究院更多>>
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相关基金:国家自然科学基金国家重点基础研究发展计划中国博士后科学基金国家教育部博士点基金更多>>
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Si nanocrystals-based multilayers for luminescent and photovoltaic device applications被引量:2
《Journal of Semiconductors》2018年第6期82-91,共10页Peng Lu Dongke Li Yunqing Cao Jun Xu Kunji Chen 
Project supported by the National Natural Science Foundation of China(Nos.11774155,11274155)
Low dimensional Si materials have attracted much attention because they can be developed in many kinds of new-generation nano-electronic and optoelectronic devices, among which Si nanocrystals-based mul- tilayered mat...
关键词:quantum dot SUPERLATTICES LUMINESCENT PHOTOVOLTAIC 
Dependence of elastic strain field on the self-organized ordering of quantum dot superlattices
《Journal of University of Science and Technology Beijing》2007年第5期477-481,共5页Yumin Liu Zhongyuan Yu Yongzhen Huang 
This work was financially supported by the "973" National Basic Research Program of China (No. 2003CB314901);the National "863" High Technology Project of China (No. 2003AA311070);the Open Project of State Key Laboratory on Integrated Opto-electronics.
A systematic investigation of the strain distribution of self-organized, lens-shaped quantum dot in the case of groffth direction on (001) substrate was presented. The three-dimensional finite element analysis for a...
关键词:quantum dot SELF-ORGANIZATION elastic strain field SUPERLATTICE 
Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices Superlattices *
《Chinese Physics Letters》2003年第11期2001-2003,共3页杨铮 施毅 刘建林 鄢波 黄壮雄 濮林 郑有炓 王康隆 
X-Ray Diffraction Analysis on Gallium-Indium Interdiffusion in Quantum Dot Superlattices
《Chinese Physics Letters》2001年第6期810-812,共3页WANG Hui XU Shi-Jie LI Qing FENG Song-Lin 
Supported by the State Climbing Research project under Grant No.69776016.
Thermal induced interdiffusion in InAs/GaAs quantum dot superlattices is studied by high-resolution x-ray diffraction rocking curve and photoluminescence techniques.With increasing annealing temperature,up to 300 meV ...
关键词:INAS/GAAS diffusion quantum 
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