RESPONSIVITY

作品数：92被引量：110H指数：5
导出分析报告
相关领域：电子电信更多>>
相关作者：葛惟昆徐晓锋沈大可韩高荣更多>>
相关机构：中央司法警官学院香港科技大学浙江大学清华大学更多>>
相关期刊：更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划北京市自然科学基金中国博士后科学基金更多>>
-
在结果中检索

检索结果分析

结果分析中...
选择条件：
  • 期刊=Nano Researchx
共 条 记 录，以下是1-5
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
Controlled growth of vertically stacked In_(2)Se_(3)/WSe_(2) heterostructures for ultrahigh responsivity photodetector被引量：1
《Nano Research》2024年第3期1856-1863,共8页Cheng Zhang Biyuan Zheng Guangcheng Wu Xueying Liu Jiaxin Wu Chengdong Yao Yizhe Wang Zilan Tang Ying Chen Lizhen Fang Luying Huang Dong Li Shengman Li Anlian Pan 
support from the following funding:the National Key R&D Program of China(No.2022YFA1204300);the National Natural Science Foundation of China(Nos.62104066,52221001,62090035,U19A2090,U22A20138 and 51902098);the Natural Science Foundation of Hunan Province(No.2021JJ20016);the Science and Technology Innovation Program of Hunan Province(Nos.2021RC3061 and 2020RC2028);the Key Program of Science and Technology Department of Hunan Province(Nos.2019XK2001 and 2020XK2001);the Open Project Program of Wuhan National Laboratory for Optoelectronics(No.2020WNLOKF016);the National Postdoctoral Program for Innovative Talents(No.BX2021094);the Postdoctoral Science Foundation of China(No.2020M680112).
Transition metal dichalcogenides(TMDCs)are promising candidates for future optoelectronic devices accounting for their high carrier mobility and excellent quantum efficiency.However,the limited light absorption effici...
关键词：transition metal dichalcogenides(TMDCs) In_(2)Se_(3) HETEROSTRUCTURE PHOTODETECTOR ultrahigh responsivity 
Diameter-dependent photoelectric performances of semiconducting carbon nanotubes/perovskite heterojunctions
《Nano Research》2023年第11期12662-12669,共8页Yayang Yu Wenke Wang Xiao Li Linhai Li Shilong Li Xiaojun Wei Weiya Zhou Jing Lin Yang Huang Huaping Liu 
supported by the National Key Research and Development Program of China(Nos.2020YFA0714700 and 2018YFA0208402);the National Natural Science Foundation of China(Nos.51820105002,51872320,51472264,11634014,and 52172060);the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDB33030100);the Key Research Program of Frontier Sciences,CAS(No.QYZDBSSW-SYS028);the Youth Innovation Promotion Association of CAS(No.2020005).
The heterojunction of single-wall carbon nanotubes(SWCNTs)and perovskite quantum dots(QDs)shows excellent photodetection performances due to the combination of the advantages of high carrier mobility of SWCNTs and hig...
关键词：carbon nanotubes perovskite quantum dots diameter effect RESPONSIVITY DETECTIVITY 
Interlayer sensitized van der Waals heterojunction photodetector with enhanced performance被引量：1
《Nano Research》2023年第7期10537-10544,共8页Huide Wang Yonghong Zeng FanXu Meng Rui Cao Yi Liu Zhinan Guo Tingting Wang Haiguo Hu Sidi Fan Yatao Yang SWageh Omar AAl-Hartomy Abul Kalam Yonghong Shao Yu-Jia Zeng Dianyuan Fan Han Zhang 
This work was supported by National Key Research and Development Project(No.2019YFB2203503);the National Natural Science Foundation of China(No.62105211);China Postdoctoral Science Foundation(Nos.2021M702242 and 2022T150431);Natural Science Foundation of Guangdong Province(Nos.2018B030306038 and 2020A1515110373);Guangdong Basic and Applied Basic Research Foundation(No.2022A1515010649);Science and Technology Projects in Guangzhou(No.202201000002);Science and Technology Innovation Commission of Shenzhen(Nos.JCYJ20180507182047316,20200805132016001,and JCYJ20200109105608771);Natural Science Foundation of Jilin Province(No.YDZJ202201ZYTS429);NTUT-SZU Joint Research Program(No.2021008);Authors acknowledge support and funding of King Khalid University through Research Center for Advanced Materials Science(RCAMS)(No.RCAMS/KKU/0010/21);The authors also acknowledge the Photonics Center of Shenzhen University for technical support.
Although photodetection based on two-dimensional(2D)van der Waals(vdWs)P-N heterojunction has attracted extensive attention recently,their low responsivity(R)due to the lack of carrier gain mechanism in reverse bias o...
关键词：HETEROJUNCTION PHOTODETECTOR interlayer sensitization charge transfer RESPONSIVITY 
Highly sensitive and stable β-Ga_(2)O_(3) DUV phototransistor with local back-gate structure and its neuromorphic application被引量：1
《Nano Research》2022年第10期9359-9367,共9页Xiao-Xi Li Guang Zeng Yu-Chun Li Qiu-Jun Yu Meng-Yang Liu Li-Yuan Zhu Wenjun Liu Ying-Guo Yang David Wei Zhang Hong-Liang Lu 
supported by the National Natural Science Foundation of China(Nos.62027818,61874034,51861135105,and 51972319);International Science and Technology Cooperation Program of Shanghai Science and Technology Innovation Action Plan(No.21520713300);Science and Technology Commission of Shanghai Municipality(No.19520744400).
Deep ultraviolet(DUV)phototransistors are key integral of optoelectronics bearing a wide spectrum of applications in flame sensor,military detector,oil spill detection,biological sensor,and artificial intelligence fie...
关键词：β-Ga_(2)O_(3)phototransistors local back-gate RESPONSIVITY stability photonic synapse 
Thickness-dependent enhanced optoelectronic performance of surface charge transfer-doped ReS2 photodetectors被引量：1
《Nano Research》2022年第4期3638-3646,共9页Peiyu Zeng Wenhui Wang Jie Jiang Zheng Liu Dongshuang Han Shuojie Hu Jiaoyan He Peng Zheng Hui Zheng Liang Zheng Xiaojing Yao Weitao Su Dexuan Huo Zhangting Wu Zhenhua Ni Yang Zhang 
This work was supported by the National Natural Science Foundation of China(No.61904043);the Natural Science Foundation of Zhejiang Province(No.LQ19A040009).
Surface charge transfer doping has been widely utilized to tune the electronic and optical properties of semiconductor photodetectors based on low-dimensional materials.Although many studies have been conducted on the...
关键词：Surface charge transfer doping ReS_(2) thickness response time RESPONSIVITY tetrafluorotetracyanoquinodimethane(F_(4)-TCNQ) 
全选清除导出
共1页<1>
检索报告 对象比较 聚类工具 使用帮助 返回顶部