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作品数：30被引量：61H指数：5
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Temperature-controlled multisensory neuromorphic devices for artificial visual dynamic capture enhancement被引量：2
《Nano Research》2023年第5期7661-7670,共10页Gengxu Chen Xipeng Yu Changsong Gao Yan Dai Yanxue Hao Rengjian Yu Huipeng Chen Tailiang Guo 
the National Natural Science Foundation of China(Nos.62274035,U21A20497,61974029,and 11604051);the National Key Research and Development Program of China(Nos.2022YFB3603803 and 2022YFB3603802);the Natural Science Foundation of Fujian Province(Nos.2020J05104 and 2020J06012);Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(Nos.2021ZZ129 and 2021ZZ130).
Multi-sensory neuromorphic devices(MND)have broad potential in overcoming the structural bottleneck of von Neumann in the era of big data.However,the current multisensory artificial neuromorphic system is mainly based...
关键词：floating gate phototransistors perovskite nanocrystals temperature multisensory neuromorphic devices 
Highly sensitive and stable β-Ga_(2)O_(3) DUV phototransistor with local back-gate structure and its neuromorphic application被引量：1
《Nano Research》2022年第10期9359-9367,共9页Xiao-Xi Li Guang Zeng Yu-Chun Li Qiu-Jun Yu Meng-Yang Liu Li-Yuan Zhu Wenjun Liu Ying-Guo Yang David Wei Zhang Hong-Liang Lu 
supported by the National Natural Science Foundation of China(Nos.62027818,61874034,51861135105,and 51972319);International Science and Technology Cooperation Program of Shanghai Science and Technology Innovation Action Plan(No.21520713300);Science and Technology Commission of Shanghai Municipality(No.19520744400).
Deep ultraviolet(DUV)phototransistors are key integral of optoelectronics bearing a wide spectrum of applications in flame sensor,military detector,oil spill detection,biological sensor,and artificial intelligence fie...
关键词：β-Ga_(2)O_(3)phototransistors local back-gate RESPONSIVITY stability photonic synapse 
Solution processed high performance perovskite quantum dots/ZnO phototransistors
《Nano Research》2022年第4期3660-3666,共7页Md Mehedi Hasan Eric Moyen Jewel Kumer Saha Md Mobaidul Islam Arqum Ali Jin Jang 
This work was supported by the Technology Innovation Program(No.20011317);Development of an adhesive material capable of morphing more than 50%for flexible devices with a radius of curvature of 1 mm or less funded by the Ministry of Trade,Industry&Energy(MOTIE,Korea).
Phototransistors that can detect visible light have been fabricated using solution processed zinc oxide channel/zirconium oxide gate insulator thin film transistors(TFTs)and room temperature synthesized perovskite qua...
关键词：ZnO thin film transistors perovskite quantum dots photo-detectors photo-transistors 
Few-layered organic single-crystalline heterojunctions for high-performance phototransistors被引量：1
《Nano Research》2022年第3期2667-2673,共7页Xinzi Tian Jiarong Yao Lijuan Zhang Bin Han Jianwei Shi Jianwei Su Jie Liu Chunlei Li Xinfeng Liu Tianyou Zhai Lang Jiang Fangxu Yang Xiaotao Zhang Ye Zou Rongjin Li Wenping Hu 
the National Natural Science Foundation of China(Nos.51873148,52073206,51633006,and 61704038);the Natural Science Foundation of Tianjin City(No.18JC-YBJC18400);Strategic Priority Research Program of Chinese Academy of Sciences(XDB36000000).
Photogating and electrical gating are key physical mechanisms in organic phototransistors(OPTs).However,most OPTs are based on thick and polycrystalline films,which leads to substantially low efficiency of both photog...
关键词：two-dimensional(2D)molecular crystals organic single crystals organic heterojunctions organic phototransistors 
Enhanced photoresponse of Ti0_(2)/MoS_(2)heterostructure phototransistors by the coupling of interface charge transfer and photogating被引量：6
《Nano Research》2021年第4期982-991,共10页Bingxu Liu Yinghui Sun Yonghuang Wu Kai Liu Huanyu Ye Fangtao Li Limeng Zhang Yong Jiang Rongming Wang 
the National Key Research and Development Program of China(No.2018YFA0703700);the National Natural Science Foundation of China(Nos.11974041,51971025);111 Project(No.B170003);the Fundamental Research Funds for the Central Universities(No.FRF-BD-19-016A).
Two-dimensional(2D)MoS_(2)with appealing physical properties is a promising candidate for next-generation electronic and optoelectronic devices,where the ultrathin MoS_(2)is usually laid on or gated by a dielectric ox...
关键词：MoS_(2) heterojunction PHOTODETECTOR charge injection PHOTOCURRENT 
Highly sensitive phototransistors based on twodimensional GaTe nanosheets with direct bandgap被引量：4
《Nano Research》2014年第5期694-703,共10页Pingan Hu Jia Zhang Mina Yoon Xiao-Fen Qiao Xin Zhang Wei Feng Pingheng Tan Wei Zheng Jingjing Liu Xiaona Wang Juan C. Idrobo David B. Geohegan Kai Xiao 
Highly sensitive phototransistors based on two-dimensional （2D） GaTe nanosheet have been demonstrated. The performance （photoresponsivity, detectivity） of the GaTe nanosheet phototransistor can be efficiently adju...
关键词：PHOTODETECTOR gallium telluride two-dimensional semiconductor NANOSHEET 
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