CHARGE-STATE

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Effect of dielectronic recombination on charge-state distribution in laser-produced plasma based on steady-state collisional-radiative models
《Plasma Science and Technology》2020年第10期39-44,共6页Haidong LU Maogen SU Qi MIN Shiquan CAO Siqi HE Chenzhong DONG Yanbiao FU 
supported by the National Key Research and Development Program of China (Grant No. 2017YFA0402300);National Natural Science Foundation of China (NSFC) (Grant Nos. 11904293, 11874051)。
Armed with four different steady-state collisional-radiative(CR) models,we investigated the effect of dielectronic recombination(DR) on the charge-state distribution in laser-produced silicon plasma. To assess this ef...
关键词：dielectronic recombination laser-produced plasmas collisional-radiative model charge-state distribution 
Charge-state populations for the neon-XFEL system
《Chinese Physics B》2019年第6期155-163,共9页Ping Deng Gang Jiang 
Project supported by the National Natural Science Foundation of China(Grant No.11474208)
The interaction between neon and x-ray free-electron lasers with different laser parameters is systematically studied by solving a set of coupled rate equations. As an example, the evolution of 1s^12 s^22 p^6 configur...
关键词：x-ray free electron lasers NEON CHARGE-STATE POPULATION pulse WIDTH 
MOS Capacitance-Voltage Characteristics:Ⅳ.Trapping Capacitance from 3-Charge-State Impurities
《Journal of Semiconductors》2012年第1期1-19,共19页Jie Binbin Sah Chihtang 
Supported by the Xiamen University,China,and the CISAH Associates(CTSA),founded by the late Linda Su-Nan Chang Sah
Metal-Oxide-Semiconductor Capacitance-Voltage （MOSCV） characteristics containing giant carrier trapping capacitances from 3-charge-state or 2-energy-level impurities are presented for not-doped, n-doped, p- doped an...
关键词：multiple charge states trapping capacitance dopant impurity 
MOS Capacitance-Voltage Characteristics Ⅲ.Trapping Capacitance from 2-Charge-State Impurities
《Journal of Semiconductors》2011年第12期12-27,共16页揭斌斌 薩支唐 
supported by Xiamen University,China;the CTSAH Associates(CTSA);founded by the late Linda Su-Nan Chang Sah
Low-frequency and high-frequency capacitance-voltage curves of Metal-Oxide-Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-s...
关键词：MOS silicon trapping capacitance dopant impurities donors ACCEPTORS 
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