supported by the National Key R&D Program of China(No.2019YFB2204301)。
A novel dynamic photoresponse model for complementary metal-oxide-semiconductor(CMOS)image sensors with pinned photodiode(PPD)structures is proposed.The PPD is regarded as the bonding structure of the two p-n junction...
In this article we report the development of 10×10 photodiode array by realizing heterojunction between mercury cadmium telluride(HgCdTe)quantum dot(diameter^14 nm)and silicon responsive in mid wave infrared(MWIR)ran...
supported by the National Natural Science Foundation of China(No.11374105)
In this paper, we present a stable single-photon detection method based on Si-avalanche photodiode(Si-APD) operating in Geiger mode with a large temperature variation range. By accurate temperature sensing and direct ...