HETEROEPITAXY

作品数：39被引量：36H指数：3
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相关作者：孙殿照赵万顺王雷曾一平孙国胜更多>>
相关机构：中国科学院更多>>
相关期刊：《Science China(Physics,Mechanics & Astronomy)》《Science China(Technological Sciences)》《Science China Mathematics》《Frontiers of Materials Science》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划北京市自然科学基金更多>>
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Morphology transition in a heteroepitaxial system: Co/Cu(111)
《Rare Metals》2006年第z1期540-543,共4页WU Fengmin LU Hangjun FANG Yunzhang 
This was work was supported by the Natural Science Foundation for Young Scientists of Zhejiang Province (No.RC02069).
The initial stages of multilayer Co thin film grown on Cu(111) surface were simulated by means of kinetic Monte Carlo (KMC) method, where the realistic growth model and physical parameters were presented. The effects ...
关键词：HETEROEPITAXY morphology transition KMC simulation ES barrier 
Crystal Perfection in GaP Films Heteroepitaxially Grown on GaAs by Low-pressure Metalorganic Chemical Vapor Deposition
《Rare Metals》2000年第2期87-90,共4页张兆春 潘教清 崔得良 孔祥贵 秦晓燕 黄柏标 蒋民华 
ThisprojectissupportedbytheNationalNaturalScienceFoundationofChina(contractNo .5982 30 0 3)andtheKeyLaboratoryofExcitedStatePr
The crystal perfection in GaP epitaxial layers was stuided by the use of double crystal X ray diffraction,backscattering spectrometry and Raman scattering techniques.GaP films grown on GaAs by low pressure metalorga...
关键词：GAP HETEROEPITAXY Raman spectroscopy Backscattering spectrometry 
Heteroepitaxy and Kinetic Study of GaAs/Ge/GaAs Multilayer Material
《Rare Metals》1989年第3期51-56,共6页Zhang, Xiafang  Peng, Ruiwu  Jiang, Wenda 
GaAs/Ge/GaAs multilayer heterostructure material has been prepared in situ in chloride system with improved double bubble bottle and double reaction chamber. In order to control the growth process, the effect of vario...
关键词：CRYSTALLIZATION Semiconducting Germanium Epitaxial Growth Semiconductor Devices HETEROJUNCTIONS 
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