supported by the National Natural Science Foundation (Nos. 60990311 and 60676004);the Key Basic Research Project of Shanghai Science and Technology (No. 10JC1415700)
A-plane GaN films are deposited on (302) γ-LiAlO2 substrates by metalorganic chemical vapor deposition (MOCVD). The X-ray diffraction (XRD) results indicate that the in-plane orientation relationship between Ga...