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A-PLANE: 作品数：19被引量：7H指数：1; 导出分析报告; 相关领域：电子电信理学更多>>; 相关机构：东南大学更多>>; 相关期刊：《Chinese Physics Letters》《Chinese Optics Letters》《Science China(Technological Sciences)》《Chinese Physics B》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金国家高技术研究发展计划更多>>

Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films: 《Chinese Physics B》2024年第1期631-636,共6页陈凯赵见国丁宇胡文晓刘斌陶涛庄喆严羽谢自力常建华张荣郑有炓; Project supported by the National Key Research and Development Program of China (Grant Nos.2021YFB3601000 and 2021YFB3601002);the National Natural Science Foundation of China (Grant Nos.62074077,61921005,61974062,62204121,and 61904082);Leading-edge Technology Program of Jiangsu Natural Science Foundation (Grant No.BE2021008-2);the China Postdoctoral Science Foundation (Grant No.2020M671441)。; Nonpolar(11–20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal–organic chemical vapor deposition(MOCVD) system. The effects of Mg-doping temperature on the structural a...; 关键词：nonpolar a-plane GaN film Mg-doping temperature strains activation efficiency

Epitaxial Growth and Characteristics of Nonpolar a-Plane InGaN Films with Blue-Green-Red Emission and Entire In Content Range被引量：6: 《Chinese Physics Letters》2022年第4期83-87,共5页Jianguo Zhao Kai Chen Maogao Gong Wenxiao Hu Bin Liu Tao Tao Yu Yan Zili Xie Yuanyuan Li Jianhua Chang Xiaoxuan Wang Qiannan Cui Chunxiang Xu Rong Zhang Youdou Zheng; supported by the National Natural Science Foundation of China(Grant Nos.62074077,61921005,61974062,and 61904082);the China Postdoctoral Science Foundation(Grant No.2020M671441);the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(Grant Nos.19KJB510006 and 19KJB510039);the Natural Science Foundation of Jiangsu Province(Grant No.BK20190765)。; Nonpolar(1120)plane In_(x)Ga_(1-x)N epilayers comprising the entire In content(x)range were successfully grown on nanoscale Ga N islands by metal-organic chemical vapor deposition.The structural and optical properties...; 关键词：POLAR LIFETIME separation

Surface Morphology Improvement of Non-Polar a-Plane Ga N Using a Low-Temperature GaN Insertion Layer: 《Chinese Physics Letters》2020年第3期69-72,共4页Shen Yan Xiao-Tao Hu Jun-Hui Die Cai-Wei Wang Wei Hu Wen-Liang Wang Zi-Guang Ma Zhen Deng Chun-Hua Du Lu Wang Hai-Qiang Jia Wen-Xin Wang Yang Jiang Guoqiang Li Hong Chen; Supported by the National Natural Science Foundation of China(Grant Nos.11574362 and 61704008)。; We demonstrate that a low-temperature Ga N insertion layer could significantly improve the surface morphology of non-polar a-plane Ga N.The two key factors in improving the surface morphology of non-polar a-plane Ga N...; 关键词：INSERTION POLAR ROUGHNESS

Different structural origins for different sized surface pits observed on a-plane GaN film被引量：1: 《Science China(Technological Sciences)》2016年第1期156-161,共6页GAO ZhiYuan LI JiangJiang XUE XiaoWei CUI BiFeng XING YanHui ZOU DeShu; supported by the National Natural Science Foundation of China(Grant Nos.11204009&61204011);Beijing Municipal Natural Science Foundation(Grant No.4142005); A correlation study between the observed surface morphology using high-resolution scanning electron microscopy(HRSEM) and the observed structural imperfections using transmission electron microscopy(TEM) has been cond...; 关键词：surface pits nonpolar Ga N screw dislocations partial dislocations Island coalescence

Growth of a-Plane GaN Films on r-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy: 《Chinese Physics Letters》2015年第8期173-176,共4页姜腾许晟瑞张进成林志宇蒋仁渊郝跃; Supported by the National Natural Science Foundation of China under Grant No 61204006;the Fundamental Research Funds for the Central Universities under Grant No 7214570101;the National Key Science and Technology Special Project under Grant No 2008ZX01002-002; Hydride vapor phase epitaxy （HVPE） is utilized to grow nonpolar a-plane GaN layers on r-plane sapphire templates prepared by metal organic vapor phase epitaxy （MOVPE）. The surface morphology and microstructures of...; 关键词：MOVPE GAN Growth of a-Plane GaN Films on r-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy

Growth of a-Plane InN Film and Its THz Emission: 《Chinese Physics Letters》2014年第7期160-163,共4页王光兵赵国忠郑显通王平陈广荣新王新强; Supported by the National Basic Research Program of China under Grant No 2012CB619300, the National Natural Science Foundation of China under Grant Nos 61225019, 11023003 and 61376060, and the National High-Technology Research and Devel- opment Program of China under Grant No 2011AA050514.; We report the growth of a-plane InN on an r-plane sapphire substrate by plasma-assisted molecular-beam epitaxy. It is found that the a-plane InN is successfully grown by using a CaN buffer layer, which has been confir...

Giant in-plane optical anisotropy of a-plane ZnO on r-plane sapphire: 《Journal of Semiconductors》2013年第12期17-20,共4页武树杰陈涌海秦旭东高寒松俞金玲朱来攀李远时凯; Project supported by the State Key Development Program for Basic Research of China(Nos.2013CB619306,2012CB921304);the National Natural Science Foundation of China(No.60990313);the National High Technology Research and Development Program of China(No.2011AA03A101); We have measured the in-plane optical anisotropy （IPOA） of （1120） ZnO （a-plane） on （10]-2） sapphire （r-plane） by reflectance difference spectroscopy （RDS） at room temperature. Giant IPOA has been observed ...; 关键词：ZNO in-plane optical anisotropy reflectance difference spectroscopy

Strain Distributions in Non-Polar a-Plane In_(x)Ga_(1−x)N Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction: 《Chinese Physics Letters》2013年第9期169-172,共4页ZHAO Gui-Juan YANG Shao-Yan LIU Gui-Peng LIU Chang-Bo SANG Ling GU Cheng-Yan LIU Xiang-Lin WEI Hong-Yuan ZHU Qin-Sheng WANG Zhan-Guo; Supported by the National Natural Science Foundation of China under Grant Nos 91233111,61274041,11275228,61006004 and 61076001;the National Basic Research Program of China(No 2012CB619305);the National High-Technology R&D Program of China(No 2011AA03A101).; By using x-ray diffraction analysis,we investigate the major structural parameters such as strain state and crystal quality of non-polar a-plane In_(x)𝑦Ga_(1−x)𝑦N thin films grown on r-sapphire substrates by metalor...; 关键词：technique deposition. PLANE

Growth and Characterization of an a-Plane In_(x)Ga_(1−x)N on a r-Plane Sapphire: 《Chinese Physics Letters》2012年第11期178-182,共5页ZHAO Gui-Juan LI Zhi-Wei WEI Hong-Yuan LIU Gui-Peng LIU Xiang-Lin YANG Shao-Yan ZHU Qin-Sheng WANG Zhan-Guo; Supported by the National Natural Science Foundation of China under Grant Nos 60976008,61006004,61076001,10979507;the Special Funds for Major State Basic Research Project(973 program)of China(No A000091109-05);the National High-Technology R&D Program of China(No 2011AA03A101).; The non-polar a-plane(1120)In_(x)Ga_(1−x)N alloys with different indium compositions(0.074≤x≤0.555)were grown on r-plane(1012)sapphire substrates by metalorganic chemical vapor deposition,and the indium compositions...; 关键词：ALLOYS PLANE

In-Plane Optical Anisotropy of a-Plane GaN Film on r-Plane Sapphire Grown by Metal Organic Chemical vapour Deposition: 《Chinese Physics Letters》2012年第10期217-220,共4页DING Yu LIU Bin TAO Tao LI Yi ZHANG Zhao ZHANG Rong XIE Zi-Li ZHAO Hong GU Shu-Lin LV Peng ZHU Shi-Ning ZHENG You-Dou; Supported by the National Basic Research Program of China under Grant Nos 2011CB301900,2012CB619304;the National High-Technology Research and Development Program of China under Grant No 2011AA03A103;the National Natural Science Foundation of China(60990311,60820106003,60906025,60936004,61176063);the Natural Science Foundation of Jiangsu Province(BK2008019,BK2011010,BK2010385,BK2009255,BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics.; The in-plane optical anisotropic properties of the non-polar a-plane GaN films grown by metal organic chemical vapour deposition are investigated by using polarised photoluminescence(PL),optical transmission and Raman...; 关键词：SCATTERING VAPOUR ANISOTROPIC

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