ETCH

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Effect of internal structure of a batch-processing wet-etch reactor on fluid flow and heat transfer
《Chinese Journal of Chemical Engineering》2024年第8期177-186,共10页Qinghang Deng Junqi Weng Lei Zhou Guanghua Ye Xinggui Zhou 
financially supported by the National Natural Science Foundation of China(22378115 and 22078090);the Shanghai Rising-Star Program(21QA1402000);the Natural Science Foundation of Shanghai(21ZR1418100);the Fundamental Research Funds for the Central Universities(JKA01231803)。
Batch-processing wet-etch reactors are the key equipment widely used in chip fabrication,and their performance is largely affected by the internal structure.This work develops a three-dimensional computational fluid d...
关键词：Wet-etch reactor Batch-processing Computational fluid dynamics Reaction heat Internal structure Etch uniformity 
Selective wet etch of a TaN metal gate with an amorphous-silicon hard mask
《Journal of Semiconductors》2010年第11期127-130,共4页李永亮 徐秋霞 
Project supported by the Special Funds for Major State Basic Research Project of China(No.2006CB302704);the National Natural Science Foundation of China(No.60776030)
The appropriate wet etch process for the selective removal of TaN on the HfSiON dielectric with an amorphous-silicon（a-Si） hardmask is presented.SCI（NH4OH：H2O2：H2O）,which can achieve reasonable etch rates for me...
关键词：TAN wet etching metal gate high k dielectric hardmask integration 
TaN wet etch for application in dual-metal-gate integration technology
《Journal of Semiconductors》2009年第12期133-136,共4页李永亮 徐秋霞 
supported by the Special Funds for Major State Basic Research Projects(No.2006CB302704);the National Natural Science Foundation of China(No.60776030)
Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/H...
关键词：TAN wet etching metal gate high k dielectric integration 
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