financially supported by the National Natural Science Foundation of China(22378115 and 22078090);the Shanghai Rising-Star Program(21QA1402000);the Natural Science Foundation of Shanghai(21ZR1418100);the Fundamental Research Funds for the Central Universities(JKA01231803)。
Batch-processing wet-etch reactors are the key equipment widely used in chip fabrication,and their performance is largely affected by the internal structure.This work develops a three-dimensional computational fluid d...
Project supported by the Special Funds for Major State Basic Research Project of China(No.2006CB302704);the National Natural Science Foundation of China(No.60776030)
The appropriate wet etch process for the selective removal of TaN on the HfSiON dielectric with an amorphous-silicon(a-Si) hardmask is presented.SCI(NH4OH:H2O2:H2O),which can achieve reasonable etch rates for me...
supported by the Special Funds for Major State Basic Research Projects(No.2006CB302704);the National Natural Science Foundation of China(No.60776030)
Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/H...