ETCH

作品数：54被引量：55H指数：4
导出分析报告
相关领域：电子电信更多>>
相关作者：范学丽章志兴徐斌刘钧松丁娟更多>>
相关机构：上海富乐德智能科技发展有限公司北京京东方光电科技有限公司深圳市华星光电技术有限公司上海华力集成电路制造有限公司更多>>
相关期刊：更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划上海市青年科技启明星计划国家高技术研究发展计划更多>>
-
在结果中检索

检索结果分析

结果分析中...
选择条件：
  • 学科=电子电信—微电子学与固体电子学x
共 条 记 录，以下是1-3
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
Effect of internal structure of a batch-processing wet-etch reactor on fluid flow and heat transfer
《Chinese Journal of Chemical Engineering》2024年第8期177-186,共10页Qinghang Deng Junqi Weng Lei Zhou Guanghua Ye Xinggui Zhou 
financially supported by the National Natural Science Foundation of China(22378115 and 22078090);the Shanghai Rising-Star Program(21QA1402000);the Natural Science Foundation of Shanghai(21ZR1418100);the Fundamental Research Funds for the Central Universities(JKA01231803)。
Batch-processing wet-etch reactors are the key equipment widely used in chip fabrication,and their performance is largely affected by the internal structure.This work develops a three-dimensional computational fluid d...
关键词：Wet-etch reactor Batch-processing Computational fluid dynamics Reaction heat Internal structure Etch uniformity 
Etch characteristics of Si_(1-x)Ge_x films in HNO_3:H_2O:HF被引量：1
《Science China(Technological Sciences)》2011年第10期2802-2807,共6页XUE ZhongYing WEI Xing LIU LinJie CHEN Da ZHANG Bo ZHANG Miao WANG Xi 
supported by the National Natural Science Foundation of China (Grant No. 61006088);the National Basic Research Program of China (973 Program) (Grant No. 2010CB832906);the Natural Sci-ence Foundation of Shanghai (Grant No. 10ZR1436100)
The etch characteristics of Si_1-xGex films in HNO3:H2O:HF were examined. The etch rate ratio (etch selectivity) between Si_1-xGex and Si escalated with the growth of HNO3 concentration at low concentration level, and...
关键词：Si_（1-x）Ge_x etch rate SELECTIVITY HNO_3 HF 
Selective wet etch of a TaN metal gate with an amorphous-silicon hard mask
《Journal of Semiconductors》2010年第11期127-130,共4页李永亮 徐秋霞 
Project supported by the Special Funds for Major State Basic Research Project of China(No.2006CB302704);the National Natural Science Foundation of China(No.60776030)
The appropriate wet etch process for the selective removal of TaN on the HfSiON dielectric with an amorphous-silicon（a-Si） hardmask is presented.SCI（NH4OH：H2O2：H2O）,which can achieve reasonable etch rates for me...
关键词：TAN wet etching metal gate high k dielectric hardmask integration 
全选清除导出
共1页<1>
检索报告 对象比较 聚类工具 使用帮助 返回顶部