相关期刊:《Modern Mechanical Engineering》《Chinese Journal of Mechanical Engineering》《Journal of Southeast University(English Edition)》《Journal of Semiconductors》更多>>
supported by the National Research Foundation of Korea(NRF)funded by the Korea government(MSIP)(No.2012M2A8A5025825)
A vertically movable gate field effect transistor(VMGFET) is proposed and demonstrated for a microaccelerometer application. The VMGFET using air gap as an insulator layer allows the gate to move on the substrate vert...