This study was supported by the National Research Foundation(NRF)grant,funded by the Ministry of Science and Information and Communication Technology of Korea(MSIT)(Nos.2022M3F3A2A01073562,2020R1C1C1008193,and 2021M3F3A2A02037889);Younghwan Lee acknowledges support from the NRF grant,funded by the MSIT(No.NRF2022R1A6A3A01086832).We would like to thank Editage(www.editage.co.kr)for editing and reviewing the English language in the manuscript.Experiments at PLS-II were supported in part by the Korean government MSIT and POSTECH.
(Hf,Zr)O_(2)offers considerable potential for next-generation semiconductor devices owing to its nonvolatile spontaneous polarization at the nanoscale.However,scaling this material to sub-5 nm thickness poses several ...
supported by the National Natural Science Foundation of China(52072240);the Shanghai Technology Innovation Action Plan 2020-Integrated Circuit Technology Support Program(Project No.20DZ1100603).
Most piezoelectric materials exhibit a positive longitudinal piezoelectric effect(PLPE),while a negative longitudinal piezoelectric effect(NLPE)is rarely reported or paid much attention.Here,utilizing firstprinciples ...
supported by the National Natural Science Foundation of China(Grant nos.12172093 and 11932016);the Guangdong Basic and Applied Basic Research Foundation(Grant no.2021A1515012607).
The metastable polar orthorhombic phase is believed to be the origin of the ferroelectricity of hafnia-based films.The adjustment of stain,oxygen vacancies and dopant during film deposition and the wake-up electric cy...
National Research Foundation(NRF)funded by the Korean Ministry of Science and ICT(Grant no.2020R1C1C1008193,2020M3F3A2A01081593,2021M3F3A2A02037889,and 2022M3F3A2A01073562).
A continuous exponential rise has been observed in the storage and processing of the data that may not curtail in the foreseeable future.The required data processing speed and power consumption are restricted by the b...
This work was supported in part by the the National Natural Science Foundation of China(Nos.61974049,61922083,61804167,61834009,61904200,61821091,and 92064003);in part by the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDB44000000).
Hafnia-based ferroelectrics have greatly revived the field of ferroelectric memory(FeRAM),but certain reliability issues must be satisfactorily resolved before they can be widely applied in commercial memories.In part...
supported financially by the National Natural Science Foundation of China(Nos.U1537212,51971013,51590894and 51425102);the National Key Research and Development Program of China(No.2016YFB0300901)。
Rare earth oxides doped hafnia ceramics,with a formula of Hf0.76LnxY0.24-xO1.88(Ln=Gd,Yb,Gd+Yb or La+Yb),were prepared by solid state sintering at 1500℃.The effects of the rare earth oxides on the microstructures,sin...
financially sponsored by the National Natural Science Foundation of China(Nos.U1537212 and 51471019);China Postdoctoral Science Foundation(Nos.2017T100023 and 2016M600028);the National Key Research and Development Program of China(No.2016YFB0300901)。
A series of Y_(2)O_(3) fully stabilized HfO2 ceramics(Hf_(1-x)Y_(x)O_(2-0.5x),x=0.20,0.24,0.28,0.32,0.36 and 0.40)were synthesized by solid-state reaction at 1500℃.The phase composition,thermal conductivity and sinte...