RADIOMETRY

作品数：19被引量：48H指数：3
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Differential nonlinear photocarrier radiometry for characterizing ultra-low energy boron implantation in silicon
《Chinese Physics B》2022年第3期575-580,共6页Xiao-Ke Lei Bin-Cheng Li Qi-Ming Sun Jing Wang Chun-Ming Gao Ya-Fei Wang 
Project supported by the National Natural Science Foundation of China (Grant Nos. 61771103, 61704023, and 61601092)。
The measuring of the depth profile and electrical activity of implantation impurity in the top nanometer range of silicon encounters various difficulties and limitations, though it is known to be critical in fabricati...
关键词：ultra-low energy ion implantation differential nonlinear photocarrier radiometry junction depth electronic transport parameters 
Photocarrier radiometry for noncontact evaluation of space monocrystalline silicon solar cell under low-energy electron irradiation被引量：2
《Chinese Physics B》2015年第9期536-541,共6页刘俊岩 宋鹏 王飞 王扬 
A space monocrystalline silicon（c-Si） solar cell under low-energy（〈 1 MeV） electron irradiation was investigated using noncontact photocarrier radiometry（PCR）. Monte Carlo simulation（MCS） was employed to char...
关键词：photocarrier radiometry electron irradiation silicon solar cell 
Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers
《Chinese Physics B》2013年第5期462-466,共5页任胜东 李斌成 高丽峰 王谦 
Project supported by the National Natural Science Foundation of China (Grant Nos. 60676058 and 61076090)
A combined frequency-swept and quasi-time-domain photocarrier radiometry （PCR） technique was developed to characterize thermally annealed silicon wafers with B＋, P＋, and As＋ ion implantation at doses ranging from...
关键词：photocarrier radiometry ion implantation effective lifetime silicon 
Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers被引量：1
《Chinese Physics B》2010年第9期519-524,共6页刘显明 李斌成 黄秋萍 
supported by the National Natural Science Foundation of China (Grant No.60676058)
An experimental study on the photocarrier radiometry signals of As^＋ ion implanted silicon wafers before and after rapid thermal annealing is performed. The dependences of photocarrier radiometry amplitude on ion imp...
关键词：photocarrier radiometry ion implantation thermal annealing SILICON 
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