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作品数：13被引量：4H指数：1
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相关领域：电子电信更多>>
相关作者：宋李梅海潮和毕津顺韩郑生更多>>
相关机构：中国科学院微电子研究所更多>>
相关期刊：《Journal of Semiconductors》《Chinese Physics B》《Chinese Physics Letters》《Graphene》更多>>
相关基金：国家自然科学基金更多>>
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Improved performance of back-gate MoS2 transistors by NH3-plasma treating high-k gate dielectrics
《Chinese Physics B》2019年第12期338-344,共7页Jian-Ying Chen Xin-Yuan Zhao Lu Liu Jing-Ping Xu 
Project supported by the National Natural Science Foundation of China(Grant No.61774064)
NH3-plasma treatment is used to improve the quality of the gate dielectric and interface. Al2O3 is adopted as a buffer layer between HfO2 and MoS2 to decrease the interface-state density. Four groups of MOS capacitors...
关键词：MoS2 transistor high-k dielectric NH3-plasma treatment oxygen vacancy mobility 
Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel low-density metal-oxide semiconductor
《Chinese Physics B》2012年第3期405-410,共6页庄翔 乔明 张波 李肇基 
Project supported by the National Natural Science Foundation of China (Grant No. 60906038)
This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage （BV） for an ultra-high-voltage （UHV） high-side thin layer silicon-on-insulator （SOI） p-channel low-...
关键词：silicon on insulator breakdown voltage back-gate voltage p-channel low-density metaloxide-semiconductor 
The research on suspended ZnO nanowire field-effect transistor
《Chinese Physics B》2009年第4期1594-1597,共4页黎明 张海英 郭常新 徐静波 付晓君 
This paper reports that a novel type of suspended ZnO nanowire field-effect transistors （FETs） were successfully fabricated using a photolithography process, and their electrical properties were characterized by I-V...
关键词：ZnO nanowire BACK-GATE suspended field-effect transistor 
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