Type-II GaAsSb/InP DHBTs with selectively-etched InGaAsP ledge structures are fabricated and characterized for the first time. The novel InGaAsP/GaAsSb/InP DHBTs with a 20nm lattice-matched GaAsSb base and a 75 nm InP...
Supported by the Key Project of the National Natural Science Foundation of China under Grant 60537040.
Micro extrinsic Fabry-Perot interferometers (MEFPIs), with cavity lengths of up to ~ 9 μm and maximum fringe contrast of ~19 dB, are fabricated by chemically etching Er- and B-doped optical fibers and then splicing...
Absorption of host and the temperature-dependence of absorption coefficient have been considered in evaluating temperature distribution in films, when laser pulse irradiates on films. Absorption of dielectric material...