supported by the National Natural Science Foundation of China(Nos.61774089 and 61504067);the Yang Fan Innovative & Entrepreneurial Research Team Project(No.2014YT02N037)
With reducing the absorber layer thickness and processing temperature, the recombination at the back interface is se- vere, which both can result in the decrease of open-circuit voltage and fill factor. In this paper,...
supported by the National High Technology Research and Development Program of China(No.2012AA050701)
Cu(In,Ga)Se2(CIGS)thin films are prepared by a single-stage process and a three-stage process at low temperature in the co-evaporation equipment.The quite different morphologies of CIGS thin films deposited by two met...