the National Nature Science Foundation of China(61474076 and 61704106);the Young Elite Scientist Sponsorship Program by China Association for Science and Technology(2017QNRC001);Shanghai Rising-Star Program(18QB1402500 and 19QB1403800).
现有1.0 eV/0.75 eV InGaAsP/InGaAs双结太阳电池的开路电压小于各子电池的开路电压之和,鲜有研究探索开路电压损耗的来源以及如何抑制。通过研究发现,InGaAs底电池背场/基区界面处的少数载流子输运的主要机制是热离子发射,而不是缺陷...