NMOS

作品数：211被引量：189H指数：6
导出分析报告
相关领域：电子电信更多>>
相关作者：张佩杰宋克非吴训威韩郑生张鹤鸣更多>>
相关机构：西安电子科技大学电子科技大学中国科学院中国科学院微电子研究所更多>>
相关期刊：更多>>
相关基金：国家自然科学基金中央高校基本科研业务费专项资金国防科技技术预先研究基金国家重点基础研究发展计划更多>>
-
在结果中检索

检索结果分析

结果分析中...
选择条件：
  • 基金=国家重点基础研究发展计划x
共 条 记 录，以下是1-3
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
Investigation on the layout strategy of gg NMOS ESD protection devices for uniform conduction behavior and optimal width scaling被引量：2
《Science China(Information Sciences)》2015年第4期130-138,共9页LU GuangYi WANG Yuan ZHANG LiZhong CAO Jian JIA Song ZHANG Xing 
supported by National Basic Research Program of China (973 Program) (Grant No. 2011CBA00606);Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61106101)
Gate-grounded NMOS （ggNMOS） transistors have widely served as electro-static discharge （ESD） protection devices for integrated circuits. The layout strategy of ggNMOS greatly influences its ESD protection characte...
关键词：gate-grounded NMOS （ggNMOS） electro-static discharge （ESD） triggering voltage holding voltage second breakdown current 
A Phase Change Memory Chip Based on Ti Sb Te Alloy in 40-nm Standard CMOS Technology被引量：2
《Nano-Micro Letters》2015年第2期172-176,共5页Zhitang Song Yi Peng Zhan Daolin Cai Bo Liu Yifeng Chen Jiadong Ren 
supported by the‘‘Strategic Priority Research Program’’of the Chinese Academy of Sciences(XDA09020402);National Key Basic Research Program of China(2013CBA01900,2010CB934300,2011CBA00607,2011CB932804);National Integrate Circuit Research Program of China(2009ZX02023-003);National Natural Science Foundation of China(61176122,61106001,61261160500,61376006);Science and Technology Council of Shanghai(12nm0503701,13DZ2295700,12QA1403900,13ZR1447200,14ZR1447500)
In this letter, a phase change random access memory(PCRAM) chip based on Ti0.4Sb2Te3 alloy material was fabricated in a 40-nm 4-metal level complementary metal-oxide semiconductor(CMOS) technology. The phase change re...
关键词：PCRAM Ti0.4Sb2Te3alloy CMOS NMOS 
Remote charge scattering:a full Coulomb interaction approach and its impact on silicon nMOS FinFETs with HfO_2 gate dielectric
《Science China(Information Sciences)》2014年第2期201-209,共9页WEI KangLiang EGLEY James LIU XiaoYan DU Gang 
supported by National Key Basic Research Program of China(Grant No.2011CBA00604)
Remote charge scattering （RCS） has become a serious obstacle inhabiting the performance of ultra- thin gate oxide MOSFETs. In this paper, we evaluate the impact of RCS by treating the real-space full Coulomb interac...
关键词：carrier transport full Coulomb interaction gate dielectric high-t% Monte Carlo （MC） FinFET remote charge scattering （RCS） 
全选清除导出
共1页<1>
检索报告 对象比较 聚类工具 使用帮助 返回顶部