SI/SIGE

作品数：59被引量：59H指数：4
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相关作者：陈建新史辰杨维明李成林桂江更多>>
相关机构：北京工业大学中国科学院厦门大学西安交通大学更多>>
相关期刊：《Optoelectronics Letters》《Journal of Rare Earths》《半导体杂志》《中国学术期刊文摘》更多>>
相关基金：国家自然科学基金北京市自然科学基金国家重点基础研究发展计划北京市科技新星计划更多>>
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Coupling and characterization of a Si/SiGe triple quantum dot array with a microwave resonator
《Chinese Physics B》2024年第9期139-143,共5页Shun-Li Jiang Tian-Yi Jiang Yong-Qiang Xu Rui Wu Tian-Yue Hao Shu-Kun Ye Ran-Ran Cai Bao-Chuan Wang Hai-Ou Li Gang Cao Guo-Ping Guo 
the National Natural Science Foun-dation of China(Grant Nos.92265113,12074368,12304560,and 12034018);China Postdoctoral Science Foundation(Grant Nos.BX20220281 and 2023M733408).
Scaling up spin qubits in silicon-based quantum dots is one of the pivotal challenges in achieving large-scale semiconductor quantum computation.To satisfy the connectivity requirements and reduce the lithographic com...
关键词：triple-quantum dot strong coupling circuit quantum electrodynamics(cQED) scalable siliconbased cQED architectures 
Lower bound on the spread of valley splitting in Si/SiGe quantum wells induced by atomic rearrangement at the interface
《Chinese Physics B》2023年第10期126-133,共8页王刚 管闪 宋志刚 骆军委 
Project supported by the National Science Fund for Distinguished Young Scholars(Grant No.11925407);the Basic Science Center Program of the National Natural Science Foundation of China(Grant No.61888102);the Key Research Program of Frontier Sciences of CAS(Grant No.ZDBS-LYJSC019);CAS Project for Young Scientists in Basic Research(Grant No.YSBR-026)。
The achievement of universal quantum computing critically relies on scalability.However,ensuring the necessary uniformity for scalable silicon electron spin qubits poses a significant challenge due to the considerable...
关键词：quantum wells valley splitting alloy concentration fluctuation 
Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells
《Chinese Physics B》2008年第9期3479-3483,共5页林桂江 赖虹凯 李成 陈松岩 余金中 
supported by National Natural Science Foundation of China (Grant Nos 50672079,60336010 and 60676027);National Basic Research Program of China (Grant No 2007CB613400)
The hole subband structures and effective masses of tensile strained Si/Sil-yGey quantum wells are calculated by using the 6 × 6 k·p method. The results show that when the tensile strain is induced in the quantum we...
关键词：SI/SIGE tensile strain effective mass valence intersubband transition 
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