supported by the National Natural Science Foundation of China(No.62104233);the Natural Science Foundation of Ningbo(No.2022J298);the Zhejiang Provincial Natural Science Foundation(No.LQ21F040004);the Ningbo Innovation 2025 Major Project(No.2021Z082)。
AlGaN-based light-emitting diodes(LEDs)on offcut substrates enhance radiative emission via forming carrier localization centers in multiple quantum wells(MQWs).This study introduces the carrier transport barrier conce...
supported by the Key Projects of the 2022 National Defense Science and Technology Foundation Strengthening Plan 173 (Grant No.2022-173ZD-010);the Equipment PreResearch Foundation of The State Key Laboratory (Grant No.6142101200204)。
Wideband spectrum sensing with a high-speed analog-digital converter(ADC) presents a challenge for practical systems.The Nyquist folding receiver(NYFR) is a promising scheme for achieving cost-effective real-time spec...
This paper presents a study of a non-uniform pitch helical resonator (NPHR) structure and the coupling mechanisms to design dual-passband filters. The previous research analyzes NPHR as a type of step impedance resona...
[Objectives]To analyze and optimize the crop planting structure in Ningxia based on the shortage of water resources and the large proportion of agricultural water consumption in Ningxia.[Methods]The change trend of cr...
supported by National Science Fund for Distinguished Young Scholars (No.61925102);Beijing University of Posts and TelecommunicationsChina Mobile Research Institute Joint Innovation Center。
With the research of the upcoming sixth generation(6 G) systems, new technologies will require wider bandwidth, larger scale antenna arrays and more diverse wireless communication scenarios on the future channel model...
Science and Technology Plan Project of Guizhou Province(No.[2019]1084 and[2018]5781);National Natural Science Foundation of China(No.51963003);The Youth Science and Technology Talent Growth Project of Guizhou Province Education Department(No.[2018]106);Outstanding Youth Program of Guizhou Province(No.20170439178);The Key project of Fundamental research in Guizhou province[2020]1Z044;Scientific Research Project of Introduced Talents of Guizhou University(No.(2017)07)are acknowledged for the financial support.
Some precision electronics such as signal transmitters need to not only emit effective signal but also be protected from the external electromagnetic(EM)waves.Thus,directional electromagnetic interference(EMI)shieldin...
the National Natural Science Foundation of China(Grant No.62075074);the National Key R&D Program of China(Nos.2018YFF01011800 and 2018YFB2201901).
With the benefits of low latency,wide transmission bandwidth,and large mode field area,hollow-core antiresonant fiber(HC-ARF)has been a research hotspot in the past decade.In this paper,a hollow core step-index antire...
Supported by the National Natural Science Foundation of China(Grant Nos.61975230,61635011,61804177 and 11804382);the National Key Research and Development Program of China(Grant No.2018YFB2200104);Beijing Municipal Science and Technology Commission(Grant No.Z191100004819010);the Key Research Program of Frontier Sciences,CAS(Grant No.QYZDB-SSW-JSC009)。
GaAs/Ge heterostructures have been employed in various semiconductor devices such as solar cells,high-performance CMOS transistors,andⅢ-Ⅴ/Ⅳheterogeneous optoelectronic devices.The performance of these devices is di...
National Key Research and Development Program of China(2016YFB0400802);National Natural Science Foundation of China(61974149);Key Research and Development Program of Zhejiang Province(2019C01080,2020C01145);Science and Technology Innovation 2025 Major Project of Ningbo(2018B10088,2019B10121);Instrument Developing Project of the Chinese Academy of Sciences(YJKYYQ20190074)。
AlGaN-based solid state UV emitters have many advantages over conventional UV sources. However, UV-LEDs still suffer from numerous challenges, including low quantum efficiency compared to their blue LED counterparts. ...
Project supported by the National Natural Science Foundation of China(Grant No.61704130);the Fund from the Science and Technology on Analog Integrated Circuit Laboratory,China(Grant No.JCKY2019210C029)。
A novel n-type junctionless field-effect transistor(JLFET) with a step-gate-oxide(SGO) structure is proposed to suppress the gate-induced drain leakage(GIDL) effect and off-state current I_(off).Introducing a 6-nm-thi...