云南高校图书馆联盟文献共享服务平台- TUNNEL

TUNNEL: 作品数：890被引量：1951H指数：16; 导出分析报告; 相关领域：医药卫生更多>>; 相关作者：张照煌利奕年唐灯平刘东民杨其新更多>>; 相关机构：上海隧道工程股份有限公司东南大学同济大学上海交通大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金北京市自然科学基金更多>>

Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions被引量：5: 《Chinese Physics Letters》2022年第12期99-103,共5页Wenkai Zhu Shihong Xie Hailong Lin Gaojie Zhang Hao Wu Tiangui Hu Ziao Wang Xiaomin Zhang Jiahan Xu Yujing Wang Yuanhui Zheng Faguang Yan Jing Zhang Lixia Zhao Amalia Patanè Jia Zhang Haixin Chang Kaiyou Wang; supported by the National Key Research and Development Program of China(Grant Nos.2022YFA1405100 and 2022YFE0134600);the Beijing Natural Science Foundation Key Program(Grant No.Z190007);the National Natural Science Foundation of China(Grant Nos.61774144,62005265,and 52272152);the Key Research Program of Frontier Sciences(Grant No.QYZDY-SSW-JSC020);the Strategic Priority Research Program of Chinese Academy of Sciences(Grant Nos.XDB44000000 and XDB28000000)。; A magnetic tunnel junction(MTJ)is the core component in memory technologies,such as the magnetic random-access memory,magnetic sensors and programmable logic devices.In particular,MTJs based on twodimensional van der ...; 关键词：RESISTANCE SPACER TUNNEL

Quantum Transport across Amorphous-Crystalline Interfaces in Tunnel Oxide Passivated Contact Solar Cells: Direct versus Defect-Assisted Tunneling: 《Chinese Physics Letters》2021年第3期75-80,共6页Feng Li Weiyuan Duan Manuel Pomaska Malte Köhler Kaining Ding Yong Pu Urs Aeberhard Uwe Rau; Supported by the National Natural Science Foundation of China(Grant Nos.61704083 and 61874060);the Natural Science Foundation of Jiangsu Province(Grant No.BK20181388);NUPTSF(Grant No.NY219030)。; Tunnel oxide passivated contact solar cells have evolved into one of the most promising silicon solar cell concepts of the past decade,achieving a record efficiency of 25%.We study the transport mechanisms of realisti...; 关键词：tuning TUNNEL CONDUCTIVITY

Normal Strain-Induced Tunneling Behavior Promotion in van der Waals Heterostructures: 《Chinese Physics Letters》2020年第8期189-193,共5页Yi-Fan He Lei-Xi Wang Zhi-Xing Xiao Ya-Wei Lv Lei Liao Chang-Zhong Jiang; Supported by the National Key Research and Development Program of China(Grant Nos.2018YFB0406603 and 2018YFA0703704);the National Natural Science Foundation of China(Grant Nos.51991341,61904052,61851403 and 61704051);the Key Research and Development Plan of Hunan Province(Grant No.2018GK2064);the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB30000000).; Van der Waals heterostructures(vdWHs)realized by vertically stacking of different two-dimensional(2D)materials are a promising candidate for tunneling devices because of their atomically clean and lattice mismatch-fre...; 关键词：TUNNELING INTERLAYER TUNNEL

Visualization of Fiber Moving in Air Tunnel with Velocity Gradient: 《Chinese Physics Letters》2020年第3期13-16,共4页Yang Miao Xiang Guo Xiao-Jun Zhang; Supported by the National Natural Science Foundation of China under Grant Nos.51605009 and 51975011。; To measure the parameters of fiber and to visualize the reshaping process of fiber in air tunnel,an experimental approach is developed in the present work.The tunnel is designed with gradient flow velocity,and the fib...; 关键词：FIBER VELOCITY TUNNEL

Dynamic Control of Tunneling Conductance in Ferroelectric Tunnel Junctions: 《Chinese Physics Letters》2013年第10期178-182,共5页ZOU Ya-Yi CHEW Khian-Hooi ZHOU Yan; Supported by the Seed Funding Program for Basic Research from the University of Hong Kong;KHC acknowledges the support through the UMRG(RP006B-13AFR).; We investigate the dynamic characteristics of electric polarization P(t)in a ferroelectric junction under ac applied voltage and stress,and calculate the frequency response and the cut-off frequency f0,which provides ...; 关键词：POLARIZATION TUNNEL FERROELECTRIC

A Silicon Tunnel Field-Effect Transistor with an In Situ Doped Single Crystalline Ge Source for Achieving Sub-60 mV/decade Subthreshold Swing被引量：1: 《Chinese Physics Letters》2013年第8期209-211,共3页LIU Yan WANG Hong-Juan YAN Jing HAN Gen-Quan; Supported by the Fundamental Research Funds for the Central Universities under Grant No 10611201312015.; We report the demonstration of an n-channel lateral Si tunnel field-effect transistor(TFET)with a single crystalline Ge source fabricated using the gate-last process.The p Ge source was in situ doped and grown at 320...; 关键词：channel TUNNEL REALIZATION

Quantum Size and Doping Concentration Effects on the Current-Voltage Characteristics in GaN Resonant Tunneling Diodes: 《Chinese Physics Letters》2013年第7期185-188,共4页Hassen Dakhlaoui; We theoretically investigate the effects of quantum size and doping concentration on the current-voltage characteristics of GaN resonant tunneling diodes.The results show a marked dependence of the peak current densit...; 关键词：DOPING TUNNEL QUANTUM

Fabrication of High-Quality Niobium Superconducting Tunnel Junctions: 《Chinese Physics Letters》2011年第8期289-292,共4页XU Qin-Yin CAO Chun-Hai LI Meng-Yue JIANG Yi ZHA Shi-Tong KANG Lin XU Wei-Wei CHEN Jian WU Pei-Heng; by the National Natural Science Foundation of China under Grant Nos 2007CB310404 and 2011CBA00107;the National Natural Science Foundation of China under Grant No 10874074;the Doctoral Funds of the Ministry of Education of China under Grant No 20090091110039。; For high-quality superconducting tunnel junctions(STJs),it is necessary to reduce leakage current as much as possible.We describe the fabrication of niobium STJs using the selective niobium(Nb)etching process and vari...; 关键词：LEAKAGE TUNNEL FILM

High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers: 《Chinese Physics Letters》2010年第11期79-81,共3页汪洋邱应平潘教青赵玲娟朱洪亮王圩; Supported by the National Natural Science Foundation of China under Grant Nos 60736036, 60706009, 60777021 and 60702006, the National Basic Research Program of China under Grant Nos 2006CB604901 and 2006CB604902, and the National High-Tech Research and Development Program of China under Grant No 2007AA03Z419, 2007AA03Z417 and 2009AA03Z442.; We fabricate 1.5 μm InGaAsP/InP tunnel injection multiple？quantum-well （TI-MQW） Fabry-Perot （F-P） ridge lasers. The laser heterostructures, including an inner cladding layer and an InP tunnel barrier layer, are ...; 关键词：Surfaces interfaces and thin films Optics quantum optics and lasers

Controlled Manipulation with a Bose-Einstein Condensates N-Soliton Train under the Influence of Harmonic and Tilted Periodic Potentials: 《Chinese Physics Letters》2008年第7期2370-2373,共4页宗丰德张解放; Supported by the National Natural Science Foundation of China under Grant No 10672147, and the Natural Science Foundation of Zhejiang Province under Grant No Y605312.; A model of the perturbed complex Toda chain （PCTC） to describe the dynamics of a Bose-Einstein condensate （BEC） N-soliton train trapped in an applied combined external potential consisting of both a weak harmonic ...; 关键词：OPTICAL LATTICES TUNNEL ARRAYS WAVE SYSTEMS PROPAGATION STABILITY DYNAMICS VORTEX GASES CHAOS

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