Project supported by the National Natural Science Foundation of China(Grant Nos.11275024,61274024,and 61474123);the Youth Innovation Promotion Association,China(Grant No.2013105);the Ministry of Science and Technology of China(Grant Nos.2013YQ030595-3 and 2011AA120101)
We characterized the dependence of the timing jitter of an InGaAs/InP single-photon avalanche diode on the excess bias voltage(V(ex)) when operated in 1-GHz sinusoidally gated mode.The single-photon avalanche diod...
Project supported by the National Basic Research Program of China(Grant Nos.2011CB301900 and 2011CB922100);the Priority Academic Program Development of Jiangsu Higher Education Institutions,China
The time and temperature dependence of threshold voltage shift under positive-bias stress(PBS) and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide(a-IGZO) thin-film transisto...