CONDUCTANCE

作品数：272被引量：266H指数：7
导出分析报告
相关领域：医药卫生更多>>
相关作者：于强王天铎沈梅芳武军杰张代民更多>>
相关机构：东南大学中国科学院中国科学院地理研究所长安大学更多>>
相关期刊：更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金河北省自然科学基金更多>>
-
在结果中检索

检索结果分析

结果分析中...
选择条件：
  • 期刊=Journal of Semiconductorsx
共 条 记 录，以下是1-6
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
Analysis and performance exploration of high performance(HfO_2) SOI FinFETs over the conventional(Si_3N_4) SOI FinFET towards analog/RF design
《Journal of Semiconductors》2018年第12期68-74,共7页Neeraj Jain Balwinder Raj 
Nowadays FinFET devices have replaced the MOS devices almost in all complex integrated circuits of electronic gadgets like computer peripherals, tablets, and smartphones in portable electronics. The scaling of FinFET ...
关键词：SOI FinFET SCEs intrinsic gain trans-conductance cut-off frequency 
Characterization of the effects of nitrogen and hydrogen passivation on SiO2/4H-SiC interface by low temperature conductance measurements被引量：2
《Journal of Semiconductors》2016年第2期148-154,共7页王弋宇 彭朝阳 申华军 李诚瞻 吴佳 唐亚超 赵艳黎 陈喜明 刘可安 刘新宇 
supported by the National Natural Science Foundation of China(Nos.61106080,61275042);the National Science and Technology Major Project of the Ministry of Science and Technology of China(No.2013ZX02305)
We investigate the effects of NO annealing and forming gas （FG） annealing on the electrical properties of a SiO2/SiC interface by low-temperature conductance measurements. With nitrogen passivation, the density of i...
关键词：SiO2/SiC interface NO annealing forming gas annealing density of interface states 
An analytic model to describe the relationship between conductance and frequency of heterojunction
《Journal of Semiconductors》2015年第1期1-5,共5页刘昶时 
The admittance measurements of a hetero-junction can be used to derive the density of the interfacial state in the hetero-junction. Hence, prediction conductance via frequency is very useful for comprehension of the a...
关键词：conductance frequency predict hetero-junction density of interfacial state 
Capacitance and conductance dispersion in AlGaN/GaN heterostructure
《Journal of Semiconductors》2013年第1期35-38,共4页闫大为 王福学 朱兆旻 程建敏 顾晓峰 
Project supported by the Fundamental Research Funds for the Central Universities of China (Nos.JUSRP111A42,JUSRP211A37,JUSRP20914,JUSRP11230);the State Key Laboratory of ASIC & System,China (No.11KF003);the Natural Science Foundation of Jiangsu Province,China (No.BK2012110)
The dispersion mechanism in Al0：27Ga0：73N/GaN heterostructure was investigated using frequencydependent capacitance and conductance measurements.It was found that the significant capacitance and conductance dispersi...
关键词：capacitance dispersion AlGaN/GaN heterostructure strain relaxation model 
Physical effect on transition from blocking to conducting state of barrier-type thyristor
《Journal of Semiconductors》2010年第12期33-37,共5页李海蓉 李思渊 
The transition of the barrier-type thyristor （BTH） from blocking to conducting-state occurs between two entirely contrary physical states with great disparity in nature. The physical effects and mechanisms of the tr...
关键词：barrier-type thyristor negative differential resistance physical effect conductance modulation 
Density-controllable nonvolatile memory devices having metal nanocrystals through chemical synthesis and assembled by spin-coating technique被引量：1
《Journal of Semiconductors》2010年第12期70-74,共5页王广利 陈裕斌 施毅 濮林 潘力嘉 张荣 郑有炓 
A novel two-step method is employed, for the first time, to fabricatc nonvolatile memory devices that have metal nanoerystals. First, size-averaged Au nanocrystals are synthesized chemically; second, they are assemble...
关键词：metal nanocrystal nonvolatile memory SELF-ASSEMBLE spin-coating technique conductance--voltagecurve memory window 
全选清除导出
共1页<1>
检索报告 对象比较 聚类工具 使用帮助 返回顶部