Supported by the National Natural Science Foundation of China under Grant Nos 11272128 and 11072081, and the Fundamental Research Funds for Central Universities under Grant No 2012QN024.
The influence of dislocation dissociation on the evolution of Frank-Read (F-R) sources is studied using a three- dimensional discrete dislocation dynamics simulation (3D-DDD). The classical Orowan nucleation stres...
Electrical activity of Frank partial dislocations bounding stacking faults and the influence of Fe impurities in Czochralski-grown silicon are investigated by means of the electron-beam-induced-current(EBIC)technique....
Precipitation behaviors of Cu and Ni on Frank-type partial dislocations in Czochralski-grown silicon are investigated.It is found that Cu develops precipitate colonies in the region away from Frank,partials and does n...