GESI

作品数：49被引量：31H指数：2
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相关机构：复旦大学西安交通大学北京工业大学云南大学更多>>
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Atomic Layer Deposition of Al2O3 on H-Passivated GeSi： Initial Surface Reaction Pathways with H/GeSi（100）-2 × 1
《Chinese Physics Letters》2009年第5期64-66,共3页施煜 孙清清 董琳 刘晗 丁士进 张卫 
Supported by the National High Technology Research and Development Program of China under Grant No 2006AA03Z307, the National Natural Science Foundation of China under Grant Nos 60628403 and 60776017, and SRFDP （20060246032）.
The reaction mechanisms of Al（CH3 ）3 （TMA） adsorption on H-passivated GeSi（100）-2 × 1 surface are investigated with density functional theory. The Si-Ge and Ge-Ge one-dimer cluster models are employed to repres...
Transient Hole Trapping in Individual GeSi Quantum Dot Grown on Si（001） Studied by Conductive Atomic Force Microscopy
《Chinese Physics Letters》2008年第12期4360-4363,共4页吴荣 林健晖 张生利 杨鸿斌 蒋最敏 杨新菊 
Supported by the National Natural Science Foundation of China under Grant Nos 60425411 and 10874030, the National Basic Research Programme of China under Grant No 2006CB921505, and Shanghai Science and Technology Commission.
Electrical properties of individual self-assembled GeSi quantum dots grown on Si substrates are investigated by using conductive atomic force microscopy at room temperature. By controlling the bias voltage sweep in a ...
关键词：field emission molybdenum dioxide enhancement factor 
Phonon Participation in the Light Emission Process of Porous GeSi Layer
《Chinese Physics Letters》1993年第5期317-320,共4页SHI Hongtao ZHENG Youdou YUAN Renkuan 
Relaxed Ge_(0.5)Si_(0.5)/Si heterostructure was grown by the rapid radiant heating,very low pressure chemical vapor deposition(RRH-VLP/CVD).We report the anomalous temperature dependence of photoluminescence(PL)from p...
关键词：GESI POROUS ANOMALOUS 
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