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Electrically pumped metallic and plasmonic nanolasers被引量：3: 《Chinese Physics B》2018年第11期158-166,共9页Martin T Hill; Project supported by an Australian Research Council Future Fellowship Grant; In recent years, there have been a significant number of demonstrations of small metallic and plasmonic lasers. The vast majority of these demonstrations have been for optically pumped devices. Electrically pumped dev...; 关键词：semiconductor lasers laser diode microcavity and microdisk laser integrated optics

Thermal analysis of GaN-based laser diode mini-array: 《Chinese Physics B》2018年第9期311-315,共5页Jun-Jie Hu Shu-Ming Zbang De-Yao Li Feng Zhang Mei-Xin Feng Peng-Yan Wen Jian-Ping Liu Li-Qun Zhang Hui Yang; Project supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0402002,2016YFB0401803,2017YFB0405002,2017YFB0405003,and 2017YFB0405005);the National Natural Science Foundation of China(Grant Nos.61574160,61704184,and 61334005);the Strategic Priority Research Program of the Chinese Academy of Science(Grant No.XDA09020401);the Chinese Academy of Science Visiting Professorship for Senior International Scientists(Grant No.2013T2J0048);the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20170430);the CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows,China(Grant No.2016LH0026); Thermal characteristics of multiple laser stripes integrated into one chip is investigated theoretically in this paper. The temperature pattern of the laser diode mini-array packaged in a TO-can is analyzed and optimi...; 关键词：GaN laser diode laser diode array thermal analysis temperature distribution

Design and performance of a composite Tm:YAG laser pumped by VBG-stabilized narrow-band laser diode: 《Chinese Physics B》2017年第7期140-143,共4页戴殊韬黄见洪黄海舟吴丽霞李锦辉邓晶葛燕林文雄; Project supported by the Science and Technology Major Project of Fujian Province,China(Grant No.2013HZ0003-2); A 2-μm composite Tm：YAG laser pumped with a narrow-band laser diode was presented. The temperature distribution and thermal lens in the Tm：YAG were numerically simulated by a finite element method and the results w...; 关键词：Tm：YAG 2 μm laser thermal effects DIODE-PUMPED

Efficient Nd:YVO4 laser in-band pumped by wavelength-locked 913.9-nm laser diode and Q-switch operation被引量：1: 《Chinese Physics B》2017年第2期234-237,共4页Bin Li Peng Lei Bing Sun Yang-Bo Bai; Project supported by Tianjin City High School Science&Technology Fund Planning Project(Grant No.20140703); An efficient 1064-nm Nd：YVO_4laser in-band pumped by a wavelength-locked laser diode（LD） at 913.9 nm was demonstrated. The maximum continuous wave（CW） output power of 23.4 W at 1064 nm was realized with the incid...; 关键词：in-band pumped Nd：YVO_4 laser 1064 nm Q-switched

An efficient continuous-wave YVO_4/Nd:YVO_4/YVO_4 self-Raman laser pumped by a wavelength-locked 878.9 nm laser diode被引量：1: 《Chinese Physics B》2016年第11期275-278,共4页樊莉赵伟倩乔鑫夏长权汪丽春范会博沈明亚; Project supported by the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK20130453 and BK20130434);the National Natural Science Foundation of China(Grant No.11304271); We report an efficient continuous-wave self-Raman laser at 1176 nm based on a 20-mm-long composite YVO4/Nd：YVO4/YVO4 crystal and pumped by a wavelength-locked 878.9 nm diode laser.A maximum output power of 5.3 W is a...; 关键词：pumped locked pumping resonator incident mirror virtue coupler powers grating

A power and wavelength detuning-dependent hysteresis loop in a single mode Fabry-Prot laser diode: 《Chinese Physics B》2013年第8期434-438,共5页吴建伟 Bikash Nakarmi; supported by the National Natural Science Foundation of China(Grant No.61205111);the Open Foundation of State Key Laboratory of Millimeter Waves,China(Grant No.K201219);the Natural Science Foundation of Chongqing Normal University,China(Grant No.2011XLZ06); In this paper, we observe experimentally the optical bistability induced by the side-mode injection power and wave- length detuning in a single mode Fabry-P6rot laser diode （SMFP-LD）. Results show that the bistabili...; 关键词：single mode Fabry-P6rot laser diode injection locking behavior optical bistability

Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure: 《Chinese Physics B》2013年第7期415-419,共5页曹文彧贺永发陈钊杨薇杜为民胡晓东; Project supported by the National Basic Research Program of China(Grant No.2012CB619304);the National Natural Science Foundation of China(Grant Nos.61076013 and 51272008);the Beijing Municipal Science and Technology Project,China(Grant No.H030430020000); The electroluminescence （EL） and photoluminescence （PL） spectra of InGaN/GaN multiple quantum wells （MQWs） with a prestrained InGaN interlayer in a laser diode structure are investigated. When the injection curr...; 关键词：ELECTROLUMINESCENCE quantum-confined Stark effect InGaN/GaN quantum wells laser diode

Dynamic thermal modeling and parameter identification for a monolithic laser diode module: 《Chinese Physics B》2013年第3期317-322,共6页李金义杜振辉马艺闻徐可欣; Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 60938002);the Special-funded Program on National Key Scientific Instruments and Equipment Development of China (Grant No. 2012YQ06016501);the Tianjin Research Program of Application Foundation and Advanced Technology,China (Grant No. 11JCYBJC04900); We improved the thermal equivalent-circuit model of the laser diode module（LDM） to evaluate its thermal dynamic properties and calculate the junction temperature of the laser diode with a high accuracy.The thermal p...; 关键词：laser diode module dynamic thermal modeling thermal time constant tunable diode laser absorption spectroscopy（TDLAS）

Time delay in InGaN multiple quantum well laser diodes at room temperature: 《Chinese Physics B》2010年第12期305-309,共5页季莲江德生张书明刘宗顺曾畅赵德刚朱建军王辉段俐宏杨辉; Project supported by the National Natural Science Foundation of China (Grant Nos. 60976045,60506001,60836003 and 60776047);the National Basic Research Program of China (Grant No. 2007CB936700);the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 60925017); This paper reports that a long delay between the beginning of pumping current pulse and the onset of optical pulse is observed in InGaN laser diodes. The delay time decreases as the pumping current increases, and the ...; 关键词：INGAN laser diode delay effect saturable absorber TRAPS

GaN-based violet laser diodes grown on free-standing GaN substrate: 《Chinese Physics B》2009年第12期5350-5353,共4页张立群张书明江德生王辉朱建军赵德刚刘宗顺杨辉; Project supported by the National Natural Science Foundation of China (Grant Nos 60506001,60776047,60476021,60576003 and 60836003);the National Basic Research Programme of China (Grant No 2007CB936700); A violet laser diode （LD） structure is grown on a free-standing c-plane GaN substrate and 4 μm×800μm ridge waveguide LDs are fabricated. The electrical and the optical characteristics of LDs under different facet...; 关键词：GaN laser diode mounting configuration active region temperature

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