Supported by the National Key Research and Development Program under Grant No 2016YFE0118400;the Key Project of Science and Technology of Henan Province under Grant No 172102410062;the National Natural Science Foundation of China under Grant No 61176008;the National Natural Science Foundation of China Henan Provincial Joint Fund Key Project under Grant No U1604263
A double-tapered AlGaN electron blocking layer (EBL) is proposed to apply in a deep ultraviolet semiconductor laser diode. Compared with the inverse double-tapered EBL, the laser with the double-tapered EBL shows a hi...
Linewidth of a laser diode stack with 5 bar is reduced to 0.2 nm from 1.8 nm through the use of an external volume Bragg grating(VBG)cavity.The temperature of the VBG is controlled efficiently to make the central wave...
Supported by the National Natural Science Foundation of China under Grant No 61205111;the Open Foundation of State Key Laboratory of Millimeter Waves under Grant No K201219;the Natural Science Foundation of Chongqing Normal University under Grant No 2011XLZ06。
An optical device,consisting of a multi-mode Fabry–Pérot laser diode(MMFP-LD)with two-stage optical feedback,is proposed and experimentally demonstrated.The results show that the single-mode output with side-mode su...
Supported by the National High-Technology Research and Development Program of China under Grant No 2011AA030205;the International Cooperation Program of China under Grant No 2010DFR50650.
A 46-W laser diode end-pumped amplifier is demonstrated by using a SESAM passively mode-locked oscillator and a compact LD stack end-pumped slab amplifier.For the oscillator,a 5-W picosecond mode-locked laser with a r...
Supported by the National Basic Research Program of China under Grant No 2004CB619006, and the National Natural Science Foundation of China under Grant No 50590404.
A high-efficiency high-power Nd:YAG laser under 885 nm laser diode (LD) pumping is demonstrated. The laser crystal is carefully designed, and the overlapping between the pump modes and the laser modes is optimized....
Supported by the National Natural Science Foundation of China under Grant Nos 60506001, 60476021 and 60576003, and the National Basic Research Programme of China under Grant No 2007CB936700.
Room-temperature operation of cw GaN based multi-quantum-well laser diodes (LDs) is demonstrated. The LD structure is grown on a sapphire (0001) substrate by metalorganic chemical vapour deposition. A 2.5μm × 80...
Supported by the National Natural Science Foundation of China under Grant No 60577019.
A novel scheme to generate tunable dual-wavelength optical pulses with low timing jitter at arbitrary repetition rates is proposed and demonstrated experimentally. The pulses are generated from a gain-switched Fabry-P...
Supported by the National Natural Science Foundation of China under Grant No 60577019, and the Scientific Research Foun- dation (SRF) for the Returned 0verseas Chinese Scholars (R0CS), State Education Ministry (SEM) under Grant No 20521017002.
Theoretical analysis and experimental measurement of pulse-width fitter of diode laser pulses are presented. The expression of pulse power spectra with all amplitude jitter, timing jitter and pulse-width jitter is ded...
Supported by the Program for the New Century Excellent Talents, Excellent Young Teachers in Universities and Scientific Research Foundation for Returned 0verseas Chinese Scholars by M0E and the Natural Science Foundation of Tianjin City 05YFGPGX05100.
A laser-diode-pumped 1.54-μm passive Q-switched erbium doped glass laser was reported. We utilize a laser diode with wavelength of 973nm to pump a 1-mm Er/Yb co-doped phosphate glass with the erbium and ytterbium con...